SEMICONDUCTOR LASER DEVICE

• US 20200136341A1
• Filed: 08/12/2019
• Published: 04/30/2020
• Est. Priority Date: 10/24/2018
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KANG, Pil-Kyu, KIM, Seok-Ho, KIM, Tae-Yeong, KIM, Hoe-Chul, NA, Hoon-Joo
• Granted Patent: US 11,283,235 B2
• Time in Patent Office: Days
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/0236 using an adhesive
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/323 in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Abstract

A semiconductor laser device may include a first cladding on a substrate, an optical waveguide on the first cladding, a laser light source chip on the optical waveguide to generate a laser beam, a first adhesive layer between the optical waveguide and the laser light source chip, and a second adhesive layer covering a sidewall of the laser light source chip.

Claims

1. A semiconductor laser device, comprising:

a first cladding on a substrate;

an optical waveguide on the first cladding;

a laser light source chip on the optical waveguide, the laser light source chip generating a laser beam;

a first adhesive layer between the optical waveguide and the laser light source chip; and

a second adhesive layer covering a sidewall of the laser light source chip.

2. The semiconductor laser device as claimed in claim 1, wherein the second adhesive layer further covers a lower surface of the laser light source chip to contact the first adhesive layer.

3. The semiconductor laser device as claimed in claim 2, wherein a sum of thicknesses of the first and second adhesive layers between the laser light source chip and the optical waveguide is smaller than a thickness of either of the laser light source chip and the first cladding.

4. The semiconductor laser device as claimed in claim 1, further comprising:

an epitaxial pattern on the substrate and spaced apart from the optical waveguide;

a second cladding on the first cladding, the second cladding between the optical waveguide and the epitaxial pattern and covering the sidewall of the optical waveguide.

5. The semiconductor laser device as claimed in claim 4, wherein upper surfaces of the epitaxial pattern, the optical waveguide, and the second cladding are substantially coplanar.

6. The semiconductor laser device as claimed in claim 4, wherein the first adhesive layer covers upper surfaces of the optical waveguide, the second cladding, and the epitaxial pattern.

7. The semiconductor laser device as claimed in claim 6, wherein:

the laser light source chip partially overlaps the epitaxial pattern in a vertical direction substantially perpendicular to an upper surface of the substrate, and

the first adhesive layer is not on a portion of the upper surface exposed by the laser light source chip.

8. The semiconductor laser device as claimed in claim 4, wherein the second cladding includes silicon oxide, silicon nitride, or air.

9. The semiconductor laser device as claimed in claim 1, wherein each of the first and second adhesive layers includes an oxide.

10. The semiconductor laser device as claimed in claim 1, wherein the first cladding includes silicon oxide or silicon nitride.

11. The semiconductor laser device as claimed in claim 1, wherein the laser light source chip includes a first SCH pattern, an active pattern, a second SCH pattern, and a third cladding sequentially stacked.

12. The semiconductor laser device as claimed in claim 11, wherein:

the first separate confinement heterostructure pattern, the active pattern, and the second separate confinement heterostructure pattern include indium gallium aluminum arsenide, and

the first and second separate confinement heterostructure patterns are doped with n-type impurities and p-type impurities, respectively.

13. The semiconductor laser device as claimed in claim 11, wherein the third cladding includes indium phosphide (InP) doped with p-type impurities.

14. A semiconductor laser device, comprising:

a laser light source chip;

an optical waveguide under the laser light source chip, the optical waveguide guiding a laser beam generating by the laser light source chip;

a substrate on which the optical waveguide is formed;

an epitaxial pattern on the substrate; and

an adhesive layer structure between the laser light source chip and the epitaxial pattern, the adhesive layer structure covering a sidewall of the laser light source chip.

15. The semiconductor laser device as claimed in claim 14, further comprising:

a first cladding on the substrate, the first cladding covering a lower portion of the optical waveguide; and

a second cladding on the first cladding, the second cladding covering a sidewall of the optical waveguide,

wherein the adhesive layer structure covers upper surfaces of the epitaxial pattern, the optical waveguide and the second cladding.

16. The semiconductor laser device as claimed in claim 15, wherein the epitaxial pattern and the optical waveguide include the same material.

17. The semiconductor laser device as claimed in claim 14, wherein:

the adhesive layer structure includes first and second adhesive layers, the first adhesive layer being between the laser light source chip and the epitaxial pattern, and the second adhesive layer covering the sidewall of the laser light source chip, and

wherein each of the first and second adhesive layers includes an oxide.

18. A semiconductor laser device, comprising:

a first cladding on a substrate;

an optical waveguide on the first cladding;

an epitaxial pattern on the substrate, the epitaxial pattern including the same material as the optical waveguide and spaced apart from the optical waveguide;

a second cladding on the first cladding, the second cladding being between the optical waveguide and the epitaxial pattern;

a first adhesive layer covering upper surfaces of the epitaxial pattern, the optical waveguide, and the second cladding;

a second adhesive layer including;

a horizontal portion on the first adhesive layer, the horizontal portion extending in a horizontal direction substantially parallel to an upper surface of the substrate; and

a vertical portion extending from the horizontal portion in a vertical direction substantially perpendicular to the upper surface of the substrate from the horizontal portion; and

a laser light source chip having a lower surface and a sidewall covered by the second adhesive layer.

19. The semiconductor laser device as claimed in claim 18, wherein upper surfaces of the epitaxial pattern, the optical waveguide, and the second cladding are coplanar.

20. The semiconductor laser device as claimed in claim 18, wherein:

the laser light source chip partially overlaps the epitaxial pattern in a vertical direction substantially perpendicular to the upper surface of the substrate, and

the first adhesive layer is not the upper surface of the epitaxial pattern exposed by the laser light source chip.