SEMICONDUCTOR LASER

• US 20200136348A1
• Filed: 04/13/2018
• Published: 04/30/2020
• Est. Priority Date: 04/19/2017
• Status: Active Application

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: ENZMANN, Roland Heinrich, WOJCIK, Andreas, HALBRITTER, Hubert, BEHRINGER, Martin Rudolf, MARIC, Josip, JAMA, Mariel Grace, HAHN, Berthold, MULLER, Christian, OTTO, Isabel
• Application Number:
  US16/493,062
• Publication Number:
  US 20200136348A1
• Time in Patent Office: Days
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/02315 Support members, e.g. bases or carriers
• CPC Class Codes: H01S 5/02325 Mechanically integrated components on mount members or optical micro-benches
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/042 Electrical excitation ; Circuits therefor monolithically integrated laser drive components H01S5/0261
• CPC Class Codes: H01S 5/0422 with n- and p-contacts on the same side of the active layer
• CPC Class Codes: H01S 5/0425 Electrodes, e.g. characterised by the structure
• CPC Class Codes: H01S 5/04254 characterised by the shape
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/0428 for applying pulses to the laser
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18344 characterized by the mesa, e.g. dimensions or shape of the mesa
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 Ω.

Claims

1-16. -16. (canceled)

17. A semiconductor laser comprising:

a semiconductor layer sequence having an active zone that generates laser radiation and having a first and a second electrical connection region on mutually opposite main sides,

a contact carrier having electrical contact surfaces to electrically contact the semiconductor layer sequence,

an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier towards the contact carrier, and

a plurality of capacitors,

wherein

the connecting line is located on or in the semiconductor layer sequence,

at least two of the plurality of capacitors are present, the capacitances of which differ by at least a factor of 50,

a capacitor of the at least two of the plurality of capacitors having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply,

the capacitor having a smaller capacitance directly electrically connects to the active zone, and

a resistor is arranged between a capacitor of the at least two of the plurality of capacitors having a larger capacitance and the active zone, the resistor having a resistance of at least 100 Ω

.

18. The semiconductor laser according to claim 17,

wherein

the semiconductor laser is a surface-emitting semiconductor laser,

the semiconductor laser is a SMT component,

the contact surfaces are located in a common plane,

the active zone is oriented in parallel with the contact carrier and is located between two resonator mirrors,

during operation, a laser radiation is emitted in a direction perpendicular to the contact carrier, and

the semiconductor laser is free of a growth substrate for the semiconductor layer sequence.

19. The semiconductor laser according to claim 17, wherein an average distance of the connecting line from the semiconductor layer sequence is at most 3 μ

m.

20. The semiconductor laser according to claim 17, wherein the contact carrier consists of the contact surfaces and of a casting body.

21. The semiconductor laser according to claim 17, wherein the contact carrier is a silicon carrier.

22. The semiconductor laser according to claim 17, wherein the semiconductor layer sequence, viewed in a plan view, is subdivided into a plurality of individual laser emitters, and

the laser emitters electrically connect in parallel.

23. The semiconductor laser according to claim 17, comprising a plurality of further capacitors electrically connected in series with the active zone, wherein at least one of the further capacitors is assigned an electronic switching element to control the associated further capacitance.

24. The semiconductor laser according to claim 23, wherein at least one of the further capacitors is assigned a plurality of switching elements and these switching elements are electrically connected in parallel.

25. The semiconductor laser according to claim 17, wherein at least three further capacitors are present, which have the same further capacitance with a tolerance of at most 25%.

26. The semiconductor laser according to claim 17, wherein the capacitances of the at least two capacitors differ by at most a factor of 1000.

27. The semiconductor laser according to claim 17, further comprising at least one functional carrier in which at least one electronic component is integrated and the functional carrier is made of silicon.

28. The semiconductor laser according to claim 27, wherein the contact carrier is electrically and mechanically fastened to the functional carrier.

29. The semiconductor laser according to claim 27, wherein the capacitor having the smaller capacitance is monolithically integrated in the functional carrier as an electronic component, and at least one further capacitor is attached to the functional carrier.

30. The semiconductor laser according to claim 27, wherein at least one controllable current source is integrated in the functional carrier as an electronic component.

31. The semiconductor laser according to claim 27,

wherein the active zone covers the at least one electronic component, and

electrical contact points of the functional carrier for external electrical contacting of the semiconductor laser are applied on a side facing away from the semiconductor layer sequence.

32. The semiconductor laser according to claim 17, that

can be contacted without bonding wires and is free of bonding wires,

wherein the semiconductor laser is provided for time-of-flight applications and configured to emit laser pulses having an average pulse duration of 0.5 ns to 5 ns.

33. A semiconductor laser or a surface-emitting semiconductor laser, comprising:

a semiconductor layer sequence having an active zone that generates laser radiation and having a first and a second electrical connection region on mutually opposite main sides,

a contact carrier having electrical contact surfaces to electrically contact the semiconductor layer sequence,

an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier towards the contact carrier, and

a plurality of capacitors,

wherein

the connecting line is located on or in the semiconductor layer sequence,

at least two of the plurality of capacitors are present, the capacitances of which differ by at least a factor of 50, and

a capacitor of the at least two of the plurality of the capacitors having the smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply.