LATERAL MOSCAP PHASE ADJUSTER
First Claim
1. A phase adjuster device comprising:
- a substrate;
a first conductive region on the substrate including a first n or p dopant material at a first doping level;
a first contact region on the substrate, adjacent to the first conductive region, including the first dopant material at a second, higher, doping level;
a second conductive region including a second n or p dopant material, opposite the first dopant material, at a second doping level;
a second contact region on the substrate, adjacent to the first conductive region, including the second dopant material at a second, higher, doping level; and
an insulator layer extending perpendicularly from the substrate between the first conductive region and the second conductive region;
wherein the second conductive region includes a raised spacer portion extending upwardly beyond the first conductive region and at least partially across the top of the first conductive region.
1 Assignment
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Accused Products
Abstract
A MOSCAP phase adjuster includes two conductive regions with a thin insulating region therebetween, where charge is accumulated or depleted. In conventional MOSCAP modulators, the conductive and insulating regions are superposed layers, extending horizontally parallel to the substrate, which limits waveguide design and mode confinement, resulting in reduced phase shift performance. An improved MOSCAP phase adjuster and method of fabricating a MOSCAP phase adjuster includes depositing the material for the second conductive region beside and over top of the first conductive region after oxidation, and selectively etching the material to form the second conductive region.
3 Citations
11 Claims
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1. A phase adjuster device comprising:
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a substrate; a first conductive region on the substrate including a first n or p dopant material at a first doping level; a first contact region on the substrate, adjacent to the first conductive region, including the first dopant material at a second, higher, doping level; a second conductive region including a second n or p dopant material, opposite the first dopant material, at a second doping level; a second contact region on the substrate, adjacent to the first conductive region, including the second dopant material at a second, higher, doping level; and an insulator layer extending perpendicularly from the substrate between the first conductive region and the second conductive region; wherein the second conductive region includes a raised spacer portion extending upwardly beyond the first conductive region and at least partially across the top of the first conductive region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11-20. -20. (canceled)
Specification