Method of lowering the surface recombination velocity of indium antimonide crystals
First Claim
1. THE PROCESS OF PRODUCING A UNIFORM LOW SURFACE RECOMBINATION VELOCITY ON THE (1-1-1) FACE OF AN INDIUM ANTIMONIDE CRYSTAL COMPRISING THE STEPS OF IMMERSING SAID CRYSTAL IN A SOLUTION OF CP-4-A TO REMOVE SURFACE IRREGULARITIES, DILUTING SAID SOLUTION WITH LARGE QUANTITIES OF FIRST DEMINERALIZED WATER AND NEXT METHYL ALCOHOL TO REMOVE SAID SOLUTION WHILE MAINTAINING SAID CRYSTAL IMMERSED THROUGHOUT THE ABOVE IN SAID PROCESS, REMOVING SAID CRYSTAL FROM IMMERSION, PLACING SAID CRYSTAL IN A GLASS ENCLOSURE CONTAINING A DRY NITROGEN ATMOSPHERE AND EXCITING A GLOW DISCHARGE IN SAID ATMOSPHERE AND IN CLOSE PROXIMITY TO BE THE 1-1-1 FACE OF SAID CRYSTAL FOR A TIME SUFFICIENT TO SUBSTANTIALLY REDUCE THE SURFACE RECOMBINATION VELOCITY OF SAID CRYSTAL.
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1 Claim
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1. THE PROCESS OF PRODUCING A UNIFORM LOW SURFACE RECOMBINATION VELOCITY ON THE (1-1-1) FACE OF AN INDIUM ANTIMONIDE CRYSTAL COMPRISING THE STEPS OF IMMERSING SAID CRYSTAL IN A SOLUTION OF CP-4-A TO REMOVE SURFACE IRREGULARITIES, DILUTING SAID SOLUTION WITH LARGE QUANTITIES OF FIRST DEMINERALIZED WATER AND NEXT METHYL ALCOHOL TO REMOVE SAID SOLUTION WHILE MAINTAINING SAID CRYSTAL IMMERSED THROUGHOUT THE ABOVE IN SAID PROCESS, REMOVING SAID CRYSTAL FROM IMMERSION, PLACING SAID CRYSTAL IN A GLASS ENCLOSURE CONTAINING A DRY NITROGEN ATMOSPHERE AND EXCITING A GLOW DISCHARGE IN SAID ATMOSPHERE AND IN CLOSE PROXIMITY TO BE THE 1-1-1 FACE OF SAID CRYSTAL FOR A TIME SUFFICIENT TO SUBSTANTIALLY REDUCE THE SURFACE RECOMBINATION VELOCITY OF SAID CRYSTAL.
Specification
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Current AssigneeJohn L. Davis
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Original AssigneeJohn L. Davis
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InventorsDavis, John L.
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Application NumberUS04/157,605Time in Patent Office1,413 DaysField of SearchUS Class Current438/513CPC Class CodesH01L 21/26 Bombardment with radiation ...Y10S 148/169 Vacuum deposition, e.g. inc...Y10S 438/904 Charge carrier lifetime con...
