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Thermal coupling of parallel connected semiconductor elements

  • US 3,231,794 A
  • Filed: 06/05/1961
  • Issued: 01/25/1966
  • Est. Priority Date: 06/05/1961
  • Status: Expired due to Term
First Claim
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1. A SEMICONDUCTOR DEVICE;

  • SAIS SEMICONDUCTOR DEVICE COMPRISING A PLURALITY OF INDIVIDUAL WAFERS OF SILICON MATERIAL HAVING RESPECTIVE JUNCTIONS THEREIN, A COMMON CONDUCTIVE BASE OF MECHANICALLY AND ELECTRICALLY RECEIVING ONE SIDE OF EACH OF SAID WAFERS, AND A COMMON CONDUCTIVE COLLECTOR MEMBER;

    ONE SIDE OF EACH SAID PLURALITY OF INDIVIDUAL WAFERS BEING MOUNTED ON SAID SAID COMMON CONDUCTIVE BASE IN SPACE RELATION WITH RESPECT TO ONE ANOTHER;

    THE OTHER SIDE OF EACH OF SAID PLURALITY OF WAFERS BEING ELECTRICALLY CONNECTED TO SAID COMMON CONDUCTIVE COLLECTOR MEMBER;

    SAID WAFERS BEING THERMALLY COUPLED TO ONE ANOTHER TO MAINTAIN A RESPECTIVE FIXED TEMPERATURE;

    EACH OF SAID WAFERS HAVING A SURFACE CONFIGURATION WHICH FITS WITHIN A CIRCLE HAVING A DIAMETER OF APPROXIMATELY 3/16 OF AN INCH;

    SAID WAFERS BEING SPACED FROM ONE ANOTHER BY A DISTANCE OF APPROXIMATELY THE DIAMETER OF SAID CIRCLE;

    SAID COMMON CONDUCTIVE BASE HAVING A THICKNESS OF APPROXIMATELY THE DIAMETER OF SAID CIRCLE.

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