Monolithic semiconductor devices

• US 3,237,062 A
• Filed: 10/20/1961
• Issued: 02/22/1966
• Est. Priority Date: 10/20/1961
• Status: Expired due to Term

• Current Assignee: Bernard T. Murphy
• Original Assignee: Bernard T. Murphy
• Inventors: Murphy, Bernard T.
• Application Number:
  US04/146,624
• Time in Patent Office: 1,586 Days
• US Class Current: 257/539
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/74 Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
• CPC Class Codes: H01L 21/76 Making of isolation regions between components
• CPC Class Codes: H01L 27/0755 Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
• CPC Class Codes: Y10S 148/007 Autodoping
• CPC Class Codes: Y10S 148/036 Diffusion, nonselective
• CPC Class Codes: Y10S 148/037 Diffusion-deposition
• CPC Class Codes: Y10S 148/051 Etching
• CPC Class Codes: Y10S 148/085 Isolated-integrated
• CPC Class Codes: Y10S 148/151 Simultaneous diffusion

Claims

1. A MONOLITHIC SEMICONDUCTOR DEVICE COMPRISING:

A UNITARY BODY WITH A BULK SEMICONDUCTIVE MATERIAL OF A FIRST TYPE OF SEMICONDUCTIVITY;

A FIRST REGION OF A SECOND TYPE OF SEMICONDUCTIVITY IN P-N JUNCTION FORMING RELATION WITH AT LEAST ONE PORTION OF A FIRST MAJOR SURFACE OF SAID BODY OF BULK MATERIAL;

A THIN EPITAXIAL LAYER OF MATERIAL OF SAID SECOND TYPE OF SEMICONDUCTIVITY EXTENDING OVER SAID FIRST MAJOR SURFACE AND COVERING SAID FIRST REGION;

A PLURALITY OF SECOND REGIONS OF SAID FIRST TYPE OF SEMICONDUCTIVITY IN P-N JUNCTION FORMING RELATION WITH PORTIONS OF SAID LAYER OF SAID SECOND TYPE INCLUDING A PORTION OVER SAID FIRST REGION;

A THIRD REGION OF SAID SECOND TYPE OF SEMICONDUCTIVITY IN P-N JUNCTION FORMING RELATION WITH AT LEAST A PORTION OF ONE OF SAID SECOND REGIONS OVER SAID FIRST REGION WHEREBY SAID FIRST, SECOND AND THIRD REGIONS AND THE PORTIONS OF SAID LAYER BETWEEN SAID FIRST AND SECOND REGIONS COOPERATE TO FORM A PLURALITY OF ELECTRONIC FUNCTIONAL REGIONS AND SAID BULK MATERIAL AND SAID LAYER OF SECOND TYPE SEMICONDUCTIVITY COOPERATE TO PROVIDE ISOLATION BETWEEN THE ELECTRONIC FUNCTIONAL REGIONS;

SAID FIRST, SECOND AND THIRD REGIONS ALL HAVING A LOW RESISTIVITY COMPARED WITH THE RESISTIVITIES OF SAID BULK MATERIAL AND SAID LAYER.