Semiconductor laser structures

• US 3,257,626 A
• Filed: 12/31/1962
• Issued: 06/21/1966
• Est. Priority Date: 12/31/1962
• Status: Expired due to Term

• Current Assignee: John C. Marinace, Richard F. Rutz
• Original Assignee: John C. Marinace, Richard F. Rutz
• Inventors: Marinace, John C., Rutz, Richard F.
• Application Number:
  US04/248,380
• Time in Patent Office: 1,268 Days
• US Class Current: 372/50.1
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 21/3043 Making grooves, e.g. cutting
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/30 Structure or shape of the active region; Materials used for the active region
• CPC Class Codes: H01S 5/4031 Edge-emitting structures
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30
• CPC Class Codes: Y10S 148/028 Dicing
• CPC Class Codes: Y10S 148/085 Isolated-integrated
• CPC Class Codes: Y10S 148/115 Orientation
• CPC Class Codes: Y10S 257/926 Elongated lead extending axially through another elongated lead

Claims

1. A SEMICONDUCTOR CRYSTAL STRUCTURE COMPRISING:

A MAIN SEMICONDUCTOR CRYSTAL BODY FORMED PREDOMINANTLY OF A FIRST CONDUCTIVELY TYPE;

AT LEAST ONE SEMICONDICTOR ELEMENT INCLUDED AS A PART OF SAID SEMICONDUCTOR CRYSTAL BODY BUT PROTRUDING FROM A MAIN SURFACE THEREOF;

SAID SEMICONDUCTOR ELEMENT PROTRUSION BEING MUCH SMALLER THAN THE REMAINDER OF SAID SEMICONDUCTOR BODY AND INCLUDING CONDUCTIVELY DETERMING IMPURITIES TO FORM A SECOND CODUCTIVELY TYPE TOGETHER WITH A JUNCTION BETWEEN SAID FIRST AND SECOND CONDUCTIVITY TYPES;

AT LEAST TWO OPPOSED FACES OF SAID ELEMENT PROTRUDING FROM SAID MAIN SURFACE SUBSTANTIALLY PERPENDICULAR TO SAID JUNCTION AND COINCIDING WITH CYSTALLOGRAPHIC PLANES OF MINIMUM BOND STRENGTH OF SAID SEMICONDUCTOR CRYSTALS;

AND MEANS CONNECTED ACROSS SAID JUNCTION IN SAID ELEMENT FOR APPLYING A SIGNAL THERETO TO PRODUCE STIMULATED EMMISSION OF RADIATION IN SAID ELEMENT WHICH PROPOGATES BETWEEN SAID TWO OPPOSED FACES OF SAID ELEMENT.