Symmetrical current controlling device
First Claim
1. A SYMMETRICAL CURRENT CONTROLLING DEVICE FOR AN ELECTRICAL CIRCUIT INCLUDING A MECHANISM TYPE SEMICONDUCTOR MATERIAL MEANS AND ELECTRODES IN NON-RECTIFYING CONTACT THEREWITH FOR CONNECTING THE SAME IN SERIES IN SAID ELECTRICAL CIRCUIT, SAID SEMICONDUCTOR MATERIAL MEANS BEING OF ONE CONDUCTIVITY TYPE, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS FOR PROVIDING A FIRST CONDITION OF RELATIVELY HIGH RESISTANCE FOR SUBSTANTIALLY BLOCKING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS RESPONSIVE TO A VOLTAGE OF AT LEAST A THRESHOLD VALUE IN EITHER DIRECTION OR ALTERNATELY IN BOTH DIRECTIONS APPLIED TO SAID ELECTRODES FOR ALTERING SAID FIRST CONDITION OF RELATIVELY HIGH RESISTANCE OF SAID SEMICONDUCTOR MATERIAL MEANS FOR SUBSTANTIALLY INSTANTANEOUSLY PROVIDING AT LEAST ONE PATH THROUGH SAID-CONDUCTOR MATERIAL MEANS BETWEEN THE ELECTRODES HAVING A SECOND CONDITION OF RELATIVELY LOW RESISTANCE FOR CONDUCTING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID MAINTAINING SAID AT LEAST ONE PATH OF CLUDING MEANS FOR MAINTAINING SAID AT LEAST ONE PATH OF SAID SEMICONDUCTOR MATERIAL MEANS IN ITS SAID SECOND RELATIVELY LOW RESISTANCE CONDUCTING CONDITION AND PROVIDING
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1 Claim
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1. A SYMMETRICAL CURRENT CONTROLLING DEVICE FOR AN ELECTRICAL CIRCUIT INCLUDING A MECHANISM TYPE SEMICONDUCTOR MATERIAL MEANS AND ELECTRODES IN NON-RECTIFYING CONTACT THEREWITH FOR CONNECTING THE SAME IN SERIES IN SAID ELECTRICAL CIRCUIT, SAID SEMICONDUCTOR MATERIAL MEANS BEING OF ONE CONDUCTIVITY TYPE, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS FOR PROVIDING A FIRST CONDITION OF RELATIVELY HIGH RESISTANCE FOR SUBSTANTIALLY BLOCKING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID SEMICONDUCTOR MATERIAL MEANS INCLUDING MEANS RESPONSIVE TO A VOLTAGE OF AT LEAST A THRESHOLD VALUE IN EITHER DIRECTION OR ALTERNATELY IN BOTH DIRECTIONS APPLIED TO SAID ELECTRODES FOR ALTERING SAID FIRST CONDITION OF RELATIVELY HIGH RESISTANCE OF SAID SEMICONDUCTOR MATERIAL MEANS FOR SUBSTANTIALLY INSTANTANEOUSLY PROVIDING AT LEAST ONE PATH THROUGH SAID-CONDUCTOR MATERIAL MEANS BETWEEN THE ELECTRODES HAVING A SECOND CONDITION OF RELATIVELY LOW RESISTANCE FOR CONDUCTING CURRENT THERETHROUGH BETWEEN THE ELECTRODES SUBSTANTIALLY EQUALLY IN EACH DIRECTION, SAID MAINTAINING SAID AT LEAST ONE PATH OF CLUDING MEANS FOR MAINTAINING SAID AT LEAST ONE PATH OF SAID SEMICONDUCTOR MATERIAL MEANS IN ITS SAID SECOND RELATIVELY LOW RESISTANCE CONDUCTING CONDITION AND PROVIDING
Specification