Semiconductor radiant diode

• US 3,293,513 A
• Filed: 08/08/1962
• Issued: 12/20/1966
• Est. Priority Date: 08/08/1962
• Status: Expired due to Term

• Current Assignee: Gary E. Pittman, James R. Biard
• Original Assignee: Gary E. Pittman, James R. Biard
• Inventors: Biard, James R., Pittman, Gary E.
• Application Number:
  US04/215,642
• Time in Patent Office: 1,595 Days
• US Class Current: 257/99
• CPC Class Codes: H01L 29/207 further characterised by the doping material H01L29/2006 takes precedence
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00

Claims

1. A SEMICONDUCTOR DEVICE COMPRISING (A) A GALLIUM-ARSENIDE BODY HAVING A PAIR OF OPPOSING PARALLEL FACES, (B) SAID BODY DEFINING A P-TYPE CONDUCTIVITY REGION INCLUDING ONE OF SAID PAIR OF FACES AND A CONTIGUOUS N-TYPE CONDUCTIVELY REGION INCLUDING THE OTHER OF SAID PAIR OF FACES, (C) SAID P-TYPE AND N-TYPE REGIONS DEFINING A P-N JUNCTION THEREBETWEEN, (D) A FIRST NON-RECTIFYING ELECTRICAL CONTACT CONNECTED TO A MAJOR PORTION OF SAID ONE OF SAID PAIR OF FACES, (E) A SECOND NON-RECTIFYING CONTACT CONNECTED TO A MINOR PORTION OF SAID OTHET OF SAID PAIR OF FACES, (F) SAID SECOND CONTACT COMPRISING A PLURALITY OF EQUALLY SPACED, COMMONLY CONNECTED METALLIC MEMBERS.