Semi-conductor amplifying device

• US 3,300,658 A
• Filed: 07/02/1964
• Issued: 01/24/1967
• Est. Priority Date: 11/12/1958
• Status: Expired due to Term

• Current Assignee: Stanley Karandanis, William E. Slusher
• Original Assignee: Stanley Karandanis, William E. Slusher
• Inventors: Slusher, William E., STANLEY KARANDANIS
• Application Number:
  US04/384,571
• Time in Patent Office: 936 Days
• US Class Current: 327/540
• CPC Class Codes: G05F 1/56 using semiconductor devices in series with the load as final control devices G05F1/461 takes precedence

Claims

1. A SEMI-CONDUCTOR DEVICE FOR AMPLIFICATION HAVING AN EXTREMELY LOW TEMPERATURE COEFFICIENT COMPRISING FIVE LAYERS OF ALTERNATELY ELECTRICALLY CONTRASTING SEMI-CONDUCTOR MATERIAL INCLUDING FIRST, SECOND AND THIRD SUCCESSIVELY ADJACENT LAYERS FORMING RESPECTIVELY COLLECTOR, BASE AND EMITTER LAYERS THAT COMPRISE MEANS FOR PROVIDING TRANSISTOR ACTION, A FOURTH LAYER FORMING TOGETHER WITH A PORTION OF SAID THIRD LAYER A ZENER DIODE, AND A FIFTH LAYER FORMING TOGETHER WITH SAID FOURTH LAYER A STABISTOR IN SERIES WITH SAID ZENER DIODE, SAID THIRD LAYER BEING SUFFICIENTLY THICK TO EFFECTIVELY ISOLATE THE TRANSISTOR ACTION OF THE FIRST THREE LAYERS FROM THE ZENER DIODE ACTION, SAID BASE AND EMITTER LAYERS BEING SEPARATED BY A BASEEMITTER JUNCTION THEREBETWEEN, THE POTENTIAL ACROSS SAID IN A FIRST SENSE, SAID ZENER DIODE BEING POLED OPPOSITE TO SAID BASE-EMITTER RECTIFYING JUNCTION, SAID STABISTOR BEING POLED IN THE SAME SENSE AS SAID BASE-EMITTER RECTIFYING JUNCTION, SAID BASE-EMITTER RECTIFYING JUNCTION BEING IN SERIES WITH SAID ZENER DIODE AND SAID STABISTOR SO THAT CURRENT FLOWING ACROSS SAID BASE-EMITTER JUNCTION FLOWS THROUGH SAID ZENER DIODE AND SAID STABISTOR, THE POTENTIAL ACROSS THE SERIES COMBINATION OF SAID ZENER DIODE AND SAID STABISTOR BEING FUNCTIONALLY RELATED TO TEMPERATURE IN A SENSE OPPOSITE TO SAID FIRST SENSE TO MAINTAIN THE POTENTIAL ACROSS THE SERIES COMBINATION OF SAID BASE-EMITTER JUNCTION, SAID ZENER DIODE AND SAID STABISTOR SUBSTANTIALLY CONSTANT.

2. A SEMI-CONDUCTOR DEVICE FOR AMPLIFICATION HAVING AN EXTREMELY LOW TEMPERATURE COEFFICIENT COMPRISING THREE LAYERS OF ALTERNATELY CONTRASTING SEMI-CONDUCTOR MATERAIL FORMING RESPECTIVELY COLLECTOR, BASE AND EMITTER LAYERS THAT COMPRISE MEANS FOR PROVIDING TRANSISTOR ACTION, A WIRE OF ELECTRICALLY CONTRASTING MATERIAL CONNECTED TO SAID EMITTER LAYER AT A POINT REMOTE FROM SAID BASE LAYER WHEREBY SAID WIRE AND THE PORTION OF SAID EMITTER LAYER ADJACENT TO IT COMPRISE MEANS DEFINING A TEMPERATURE COMPENSATING ZENER DIODE RECTIFYING JUNCTION THEREBETWEEN, SAID EMITTER LAYER COMPRISING MEANS FOR EFFECTIVELY ISOLATING SAID ZENER DIODE RECTIFYING JUNCTION FROM THE TRANSISTOR ACTION EXHIBITED BY SAID COLLECTOR, BASE AND EMITTER LAYERS, SAID BASE AND EMITTER LAYERS BEING SEPARATED BY A BASEEMITTER RECTIFYING JUNCTION, THE POTENTIAL ACROSS SAID BASEEMITTER JUNCTION FUNCTIONALLY RELATED TO TEMPERATURE IN A FIRST SENSE, SAID ZENER DIODE RECTIFYING JUNCTION BEING IN SERIES WITH SAID BASE-EMITTER RECTIFYING JUNCTION SO THAT THE CURRENT FLOWING ACROSS SAID BASE-EMITTER JUNCTION FLOWS ACROSS SAID ZENER DIODE RECTIFYING JUNCTION, THE POTENTIAL ACROSS SAID ZENER DIODE RECTIFYING JUNCTION BEING FUNCTIONALLY RELATED TO TEMPERATURE IN A SENSE OPPOSITE TO SAID FIRST SENSE TO MAINTAIN THE POTENTIAL ACROSS THE SERIES COMBINATION OF SAID BASE-EMITTER JUNCTION AND SAID ZENER DIODE RECTIFYING JUNCTION SUBSTANTIALLY CONSTANT.