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Integrated circuit using oxide insulated terminal pads on a sic substrate

  • US 3,308,354 A
  • Filed: 06/28/1965
  • Issued: 03/07/1967
  • Est. Priority Date: 06/28/1965
  • Status: Expired due to Term
First Claim
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1. A SEMICONDUCTOR ELECTRONIC INTEGRATED CIRCUIT COMPRISING:

  • A BASE OF ELECTRICALLY INSULATIVE MATERIAL HAVING HIGH THERMAL CONDUCTIVITY, AT LEAST ONE ACTIVE SEMICONDUCTOR ELECTRONIC ELEMENT IMBEDDED IN SAID BASE, A PLURALITY OF TERMINAL PADS ON SAID BASE, SAID TERMINAL PADS BEING SPACED FROM SAID ACTIVE SEMICONDUCTOR ELEMENTS AND HAVING AFFIXED THERETO ELECTRICAL INTERCONNECTIONS WITH SAID ACTIVE ELEMENTS, AND A BARRIER LAYER OF MATERIAL HAVING LOW THERMAL CONDUCTIVITY INTERPOSED BETWEEN SAID TERMINAL PADS AND SAID BASE TO THERMALLY ISOLATE SAID TERMINAL PADS FROM SAID BASE.

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