Optical wave modulators and attenuators
First Claim
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1. IN COMBINATION;
- A COMPENSATED SEMICONDUCTOR ELEMENT CONTAINING CONCENTRATIONS OF BOTH ACCEPTOR AND DONOR IMPURITIES OF THE ORDER OF 1015 TO 1019 ATOMS PER CUBIC CENTIMETER THROUGHOUT SAID SEMICONDUCTOR ELEMENT;
SAID ELEMENT CHARACTERIZED BY THE PRESENCE OF DONORACCEPTOR IMPURITY PAIRS;
MEANS FOR IMPRESSING AN ELECTRIC FIELD ACROSS SAID ELEMENT;
AND A SOURCE OF OPTICAL WAVE ENERGY HAVING A FREQUENCY WITHIN THE FREQUENCY BAND DEFINED BY THE DISTRIBUTION OF ENERGY LEVEL DIFFERENCES BETWEEN DONOR-ACCEPTOR IMPURITY PAIRS DIRECTED UPON SAID ELEMENTS.
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1 Claim
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1. IN COMBINATION;
- A COMPENSATED SEMICONDUCTOR ELEMENT CONTAINING CONCENTRATIONS OF BOTH ACCEPTOR AND DONOR IMPURITIES OF THE ORDER OF 1015 TO 1019 ATOMS PER CUBIC CENTIMETER THROUGHOUT SAID SEMICONDUCTOR ELEMENT;
SAID ELEMENT CHARACTERIZED BY THE PRESENCE OF DONORACCEPTOR IMPURITY PAIRS;
MEANS FOR IMPRESSING AN ELECTRIC FIELD ACROSS SAID ELEMENT;
AND A SOURCE OF OPTICAL WAVE ENERGY HAVING A FREQUENCY WITHIN THE FREQUENCY BAND DEFINED BY THE DISTRIBUTION OF ENERGY LEVEL DIFFERENCES BETWEEN DONOR-ACCEPTOR IMPURITY PAIRS DIRECTED UPON SAID ELEMENTS.
- A COMPENSATED SEMICONDUCTOR ELEMENT CONTAINING CONCENTRATIONS OF BOTH ACCEPTOR AND DONOR IMPURITIES OF THE ORDER OF 1015 TO 1019 ATOMS PER CUBIC CENTIMETER THROUGHOUT SAID SEMICONDUCTOR ELEMENT;
Specification