Semiconductive junction laser with temperature compensation

• US 3,359,509 A
• Filed: 02/19/1964
• Issued: 12/19/1967
• Est. Priority Date: 02/19/1964
• Status: Expired due to Term

• Current Assignee: Hall, Robert N.
• Original Assignee: Hall, Robert N.
• Inventors: Hall, Robert N.
• Application Number:
  US04/345,886
• Time in Patent Office: 1,399 Days
• US Class Current: 372/44.01
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01S 3/139 by controlling the mutual position or the reflecting properties of the reflectors of the cavity , e.g. by controlling the cavity length
• CPC Class Codes: H01S 5/10 Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region H01S5/20 takes precedence
• CPC Class Codes: H01S 5/32 comprising PN junctions, e.g. hetero- or double- heterostructures H01S5/34, H01S5/36 take precedence

Claims

1. A TEMPERATURE STABILIZED SEMICONDUCTOR JUNCTION LASER DEVICE COMPRISING:

A MONOCRYSTALLINE BODY OF SEMICONDUCTIVE MATERIAL HAVING A P-N JUNCTION REGION THEREIN FOR GENERATING STIMULATED COHERENT RADIATION IN AT LEAST ONE DIRECTION RELATIVE TO SAID BODY IN RESPONSE TO ELECTRICAL EXCITATION OF SAID P-N JUNCTION REGION, SAID BODY HAVING A PLANAR SURFACE PERPENDICULAR TO SAID P-N JUNCTION;

MEANS FOR PROVIDING ELECTRICAL EXCITATION OF SAID P-N JUNCTION REGION;

AND, A TEMPERATURE COMPENSATING MATERIAL HAVING A PLANAR SURFACE LOCATED ADJACENT TO SAID BODY, SAID TEMPERATURE COMPENSATING MATERIAL RECEIVING SAID RADIATION AND REFLECTING AT AN INTERIOR BOUNDARY THEREOF AT LEAST A PORTION OF SAID RADIATION BACK TO SAID P-N JUNCTION REGION, SAID TEMPERATURE COMPENSATING MATERIAL AND SAID BODY TOGETHER COMPRISING AN OUTPUT FREQUENCY SELECTIVE RESONANT CAVITY IN WHICH SAID RADIATION TRAVELS A FIRST DISTANCE IN THE SEMICONDUCTIVE MATERIAL OF SAID BODY AND A SECOND DISTANCE IN SAID TEMPERATURE COMPENSATING MATERIAL, THE RATIO OF SAID FIRST DISTANCE TO SAID SECOND DISTANCE BEING APPROXIMATELY EQUAL IN MAGNITUDE AND OPPOSITE IN SIGN TO THE RATIO OF THE TEMPERATURE COEFFICIENT OF REFRACTION OF SAID TEMPERATURE COMPENSATING MATERIAL TO THE TEMPERATURE COEFFICIENT OF REFRACTION OF SAID SEMICONDUCTIVE MATERIAL, SO THAT THE EFFECT OF TEMPERATURE CHANGES ON THE REFRACTIVE INDEX OF SAID SEMICONDUCTIVE BODY IS CANCELLED, WHEREBY THE OUTPUT FREQUENCY OF SAID LASER DEVICE IS SUBSTANTIALLY INDEPENDENT OF TEMPERATURE CHANGES.