Method of growing thin film semiconductors using an electron beam

• US 3,419,487 A
• Filed: 01/24/1966
• Issued: 12/31/1968
• Est. Priority Date: 01/24/1966
• Status: Expired due to Term

• Current Assignee: Edward L. Kern, William B. Robbins
• Original Assignee: Edward L. Kern, William B. Robbins
• Inventors: Robbins, William B., Kern, Edward L.
• Application Number:
  US04/522,580
• Time in Patent Office: 1,072 Days
• US Class Current: 117/108
• CPC Class Codes: C23C 14/0021 Reactive sputtering or evaporation
• CPC Class Codes: C23C 14/048 using irradiation by energy or particles
• CPC Class Codes: C23C 14/22 characterised by the process of coating
• CPC Class Codes: C23C 14/32 by explosion; by evaporation and subsequent ionisation of the vapours , e.g. ion-platingC23C14/34 - C23C14/48 take precedence
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: C23C 8/04 Treatment of selected surface areas, e.g. using masks
• CPC Class Codes: C23C 8/36 using ionised gases, e.g. ionitriding
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: Y10S 117/905 Electron beam
• CPC Class Codes: Y10S 148/048 Energy beam assisted EPI growth
• CPC Class Codes: Y10S 148/065 Gp III-V generic compounds-processing
• CPC Class Codes: Y10S 148/071 Heating, selective
• CPC Class Codes: Y10S 148/158 Sputtering
• CPC Class Codes: Y10S 148/169 Vacuum deposition, e.g. including molecular beam epitaxy
• CPC Class Codes: Y10S 438/971 Stoichiometric control of host substrate composition

Claims

1. A METHOD OF FORMING ON A SUBSTRATE THIN FILMS OF SEMICONDUCTOR MATERIALS CONSISTING OF AT LEAST ONE INTERMETALLIC COMPOUND SELECTED FROM THE CLASS CONSISTING OF CADMIUM SULFIDE, CADMIUM SELENIDE, CADMIUM TELLURIDE, ZINC SULFIDE, ZINC SELENIDE, ZINC TELLURIDE, GALLIUM ANTIMONIDE, GALLIUM ARSENIDE, INDIUM ANTIMONIDE, AND INDIUM ARSENIDE WHICH COMPRISES:

DEPOSITING A LAYER OF THE METALLIC ELEMENT OF SAID INTERMETALLIC COMPOUND SELECTED FROM THE CLASS CONSISTING OF CADMIUM, ZINC, GALLIUM, AND INDIUM ON SAID SUBSTRATE.