METHOD OF MAKING SHAPED EPITAXIAL DEPOSITS

• US 3,425,879 A
• Filed: 10/24/1965
• Issued: 02/04/1969
• Est. Priority Date: 10/24/1965
• Status: Expired due to Term

• Current Assignee: Don W. Shaw, Edward W. Mehal
• Original Assignee: Don W. Shaw, Edward W. Mehal
• Inventors: Shaw, Don W., Mehal, Edward W.
• Application Number:
  US04/504,977
• Time in Patent Office: 1,199 Days
• US Class Current: 438/412
• CPC Class Codes: C30B 25/04 Pattern deposit, e.g. by using masks
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/8222 Bipolar technology
• CPC Class Codes: H01L 27/0658 Vertical bipolar transistor in combination with resistors or capacitors
• CPC Class Codes: H03G 3/3026 the gain being discontinuously variable, e.g. controlled by switching
• CPC Class Codes: Y10S 148/017 Clean surfaces
• CPC Class Codes: Y10S 148/026 Deposition thru hole in mask
• CPC Class Codes: Y10S 148/029 Differential crystal growth rates
• CPC Class Codes: Y10S 148/043 Dual dielectric
• CPC Class Codes: Y10S 148/049 Equivalence and options
• CPC Class Codes: Y10S 148/051 Etching
• CPC Class Codes: Y10S 148/085 Isolated-integrated
• CPC Class Codes: Y10S 148/106 : Masks, special
• CPC Class Codes: Y10S 148/115 : Orientation
• CPC Class Codes: Y10S 148/148 : Silicon carbide

Claims