METHOD OF BONDING A SEMI-CONDUCTOR TO A METAL CONDUCTOR AND RESULTANT PRODUCT

• US 3,494,803 A
• Filed: 05/12/1966
• Issued: 02/10/1970
• Est. Priority Date: 05/12/1966
• Status: Expired due to Term

• Current Assignee: Leonard E. Avis
• Original Assignee: Leonard E. Avis
• Inventors: Avis, Leonard E.
• Application Number:
  US04/549,538
• Time in Patent Office: 1,370 Days
• US Class Current: 136/237
• CPC Class Codes: B23K 20/22 taking account of the properties of the materials to be welded
• CPC Class Codes: H10N 10/817 the junction being non-separable, e.g. being cemented, sintered or soldered
• CPC Class Codes: H10N 10/857 comprising compositions changing continuously or discontinuously inside the material

Claims

1. A THERMOELECTRIC DEVICE FOR HIGH TEMPERATURE USE COMPRISING TWO THERMOELEMENTS OF THERMOELECTRICALLY COMPLEMENTARY MATERIAL, SAID THERMOELEMENTS BEING JOINED AT ONE END BY A COMMON METAL CONDUCTOR TO FORM A HIGH TEMPERATURE THERMOELECTRIC JUNCTION BY MEANS OF A TRANSITION BONDING MATERIAL INCLUDING A METAL AND A SUBSTANTIALLY NEUTRAL SEMICONDUCTOR WHICH IS ARRANGED TO MAKE A GRADUAL TRANSITION FROM THE COMMON COMPOSITION OF THE METAL CONDUCTOR TO THE COMPOSITION OF THE COMPLEMENTARY THERMOELECTRIC ELEMENTS.

11. A METHOD OF FORMING A LAMINATED TRANSITION BONDING SURFACE BETWEEN A CONDUCTOR AND A THERMOELECTRIC ELEMENT COMPRISING FUSING A METAL MESH SCREEN MATERIAL TO A METAL CONDUCTOR, EMBEDDING AND OVERLAYING SAID SCREEN MATERIAL WITH A SUBSTANTIALLY NEUTRAL SEMICONDUCTOR MATERIAL.