HIGH VOLTAGE INTEGRATED CIRCUIT TRANSISTOR
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Abstract
TERING NORMAL COLLECTOR-EMITTER BREAKDOWN, BECAUSE THE FIELD INTENSITY IN THE COLLECTOR-BASE CHARGE LAYER IS LIMITED.
AN INTEGRATED CIRCUIT TRANSISTOR INCLUDES A SUBSTRATE AND AN EPITAXIALLY GROWN SEMICONDUCTOR MATERIAL THEREON PROVIDING A THREE-LAYER TRANSISTOR COMPRISING A COLLECTOR LAYER, AN EMITTER LAYER, AND A BASE LAYER THEREBETWEEN. THE COLLECTOR LAYER IS CHARACTERIZED BY VIRTUALLY COMPLETE DEPLETION OF MAJORITY CARRIERS AT A COLLECTOR-EMITTER VOLTAGE LESS THAN THE VOLTAGE AT WHICH COLECTOR-EMITTER BREAKDOWN WOULD OTHERWISE OCCUR. AS A RESULT, THE COLLECTOR-EMITTER VOLTAGE MAY BE INCREASED WITHOUT ENCOUN-
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