TRIMETALLIC MASKS AND METHOD

• US 3,574,012 A
• Filed: 01/06/1969
• Issued: 04/06/1971
• Est. Priority Date: 01/06/1969
• Status: Expired due to Term

• Current Assignee: Penberg Mortimer
• Original Assignee: Penberg Mortimer
• Inventors: PENBERG MORTIMER
• Application Number:
  US04/789,291
• Time in Patent Office: 820 Days
• US Class Current: 118/504
• CPC Class Codes: C23C 14/042 using masks
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: Y10S 428/926 Thickness of individual layer specified
• CPC Class Codes: Y10S 428/934 Electrical process
• CPC Class Codes: Y10S 428/938 Vapor deposition or gas diffusion
• CPC Class Codes: Y10T 428/12361 having aperture or cut
• CPC Class Codes: Y10T 428/12868 Group IB metal-base component alternative to platinum group metal-base component [e.g., precious metal, etc.]
• CPC Class Codes: Y10T 428/12958 Next to Fe-base component
• CPC Class Codes: Y10T 428/12979 Containing more than 10% nonferrous elements [e.g., high alloy, stainless]

Abstract

A TRIMETALLIC MASK ACCORDING TO THIS DISCLOSURE COMPRISES A BASE HAVING COARSE APERTURES FORMED THEREIN. A THIN FILM LAYER OF FINE GRAIN METAL IS BONDED TO THE BASE BY AN INTERMEDIATE THIN FILM OF NOBLE METAL. FINE APERTURES ARE FORMED IN THE FINE GRAIN LAYER. THE MASK IS FORMED BY DEPOSITIONG A THIN FILM OF NOBLE METAL ONTO A SURFACE OF THE BASE AND THEREAFTER DEPOSITING A THIN FILM OF FINE GRAIN METAL ONTO THE NOBLE METAL LAYER. COARSE APERTURES ARE SELECTIVELY ETCHED IN THE BASE AND FINE APERTURES ARE SELECTIVELY ETCHED IN THE FINE GRAIN THIN FILM.

Claims