DOPING SEMICONDUCTORS WITH ELEMENTAL DOPANT IMPURITY

• US 3,576,685 A
• Filed: 03/15/1968
• Issued: 04/27/1971
• Est. Priority Date: 03/15/1968
• Status: Expired due to Term

• Current Assignee: ITT Corporation (ITT, Inc.)
• Original Assignee: Swann Richard C G, Thomas P. Cauge
• Inventors: SWANN RICHARD C G, Cauge, Thomas P.
• Application Number:
  US04/713,412
• Time in Patent Office: 1,138 Days
• US Class Current: 438/558
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

THIS INVENTION PROVIDES A METHOD OF DOPING SEMICONDUCTOR MATERIAL BY DECOMPOSING A COMPOUND OF THE DOPANT MATERIAL AND DEPOSITING THE ELEMENTAL DOPANT MATERIAL UPON THE SEMICONDUCTOR SURFACE.

Claims