STRIP LINE SWITCH

• US 3,597,706 A
• Filed: 10/01/1969
• Issued: 08/03/1971
• Est. Priority Date: 10/01/1969
• Status: Expired due to Term

• Current Assignee: Lynden U. Kibler
• Original Assignee: Lynden U. Kibler
• Inventors: Kibler, Lynden U.
• Application Number:
  US04/862,771
• Time in Patent Office: 671 Days
• US Class Current: 333/104
• CPC Class Codes: H01L 27/00 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate details thereof H01L23/00, H01L29/00 - H10K10/00; assemblies consisting of a plurality of individual solid state devices H01L25/00
• CPC Class Codes: H01P 1/15 by semiconductor devices

Abstract

A switch for high frequency use is an integrated strip line structure wherein diodes are in shunt between the source and load and can be selectively biased to produce switching with a minimum of impedance mismatching.

Claims

1. A switch for use in high frequency systems comprising a member of intrinsic semiconductor material having first and second opposed surfaces, a conductive layer on one of said surfaces, a centrally located conducting member on the other of said surfaces, a plurality of conducting strips on said other of said surfaces, each of said strips being separated from said conducting member by a direct current blocking gap, a plurality of p-conductivity type regions in said member, each of said strips being in conductive contact with a p-region, each of said strips being approximately one-quarter wavelength long at the operating frequency of said switch, a plurality of n-conductivity type regions in said member in conductive contact with said conductive layer and forming a plurality of p-i-n diodes with said p-type regions.

2. A switch as claimed in claim 1 wherein said member is of silicon.

3. A switch as claimed in claim 1 and further including means for selectively forward and reverse biasing the p-i-n diodes.