METHOD FOR PREPARING ALUMINUM NITRIDE AND METAL FLUORIDE SINGLE CRYSTALS

• US 3,607,014 A
• Filed: 12/09/1968
• Issued: 09/21/1971
• Est. Priority Date: 12/09/1968
• Status: Expired due to Term

• Current Assignee: Gilbert S. Layne, James O. Huml
• Original Assignee: Gilbert S. Layne, James O. Huml
• Inventors: Huml, James O., Layne, Gilbert S.
• Primary Examiner(s): Stern, Edward
• Application Number:
  US04/803,501
• Time in Patent Office: 1,016 Days
• Field of Search: 23/88,192
• US Class Current: 117/87
• CPC Class Codes: C01B 21/072 with aluminium

Abstract

A process for producing aluminum nitride and metal fluoride single crystals either separately or simultaneously. The process comprises contacting a subvalent aluminum compound, i.e. where A1 exhibits a valence of less than 3, in a gaseous state with a nitriding agent in a gaseous state while providing an inert surface on which the crystals can form. To prepare metal fluoride crystals, a subvalent aluminum fluoride compound in a gaseous state is contacted with a metal in a gaseous state under an inert atmosphere and providing an inert surface on which the metal fluoride crystals can form. To form the two crystals simultaneously the latter procedure is modified by carrying out the reaction in a nitriding atmosphere.

Claims

2. The process as defined in claim 1 wherein said aluminum fluoride compound is selected from the group consisting of AlF, AlF2 and mixtures thereof.

3. The process as defined in claim 1 wherein said nitriding agent is selected from the group consisting of nitrogen, ammonia and hydrazine and mixtures thereof.

4. The process as defined in claim 1 wherein the gaseous metal consists of magnesium.

5. The process as defined in claim 1 wherein the single crystals have a length to diameter ratio greater than about 100.