LEAD SULFIDE ION IMPLANTATION MASK

• US 3,607,450 A
• Filed: 09/26/1969
• Issued: 09/21/1971
• Est. Priority Date: 09/26/1969
• Status: Expired due to Term

• Current Assignee: David A. Kiewit
• Original Assignee: David A. Kiewit
• Inventors: Kiewit, David A.
• Application Number:
  US04/861,388
• Time in Patent Office: 725 Days
• US Class Current: 438/514
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 148/084 Ion implantation of compound devices

Abstract

A method for masking semiconductor bodies during the ion beam implantation of contaminants into preselected portions of a semiconductor material. The method involves the deposition of a lead sulfide film onto the surface portion of a semiconductor material and the formation of the film into a mask through the use of conventional photoresist and chemical etching techniques. The lead sulfide masked semiconductor body can then be subjected to an ion implantation operation.

Claims