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METHOD OF MANUFACTURING ALUMINIUM NITRIDE CRYSTALS FOR SEMICONDUCTOR DEVICES

  • US 3,634,149 A
  • Filed: 10/25/1967
  • Issued: 01/11/1972
  • Est. Priority Date: 10/25/1966
  • Status: Expired due to Term
First Claim
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2. A method as set forth in claim 1 wherein the silicon carbide monocrystal is provided by growing in the same chamber by recrystallization and condensation within a space bounded by silicon carbide and at a temperature of approximately 2,500* C.

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