METHOD OF MANUFACTURING ALUMINIUM NITRIDE CRYSTALS FOR SEMICONDUCTOR DEVICES
First Claim
2. A method as set forth in claim 1 wherein the silicon carbide monocrystal is provided by growing in the same chamber by recrystallization and condensation within a space bounded by silicon carbide and at a temperature of approximately 2,500* C.
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Abstract
A method of forming aluminum nitride single crystals of large area and silicon carbide-aluminum nitride heterojunctions using a modified Lely method. Aluminum nitride is introduced, as a vapor phase, into a furnace containing a plate-shaped monocrystal of silicon carbide at a temperature between 1800* and 2300* C. At those temperatures, aluminum nitride recrystallizes and condenses to deposit epitaxially on the silicon carbide. If the silicon carbide is of one conductivity type, the aluminum nitride can be suitably doped to be of the opposite conductivity type whereby a heterojunction is formed.
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Citations
6 Claims
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2. A method as set forth in claim 1 wherein the silicon carbide monocrystal is provided by growing in the same chamber by recrystallization and condensation within a space bounded by silicon carbide and at a temperature of approximately 2,500* C.
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3. A method as set forth in claim 1 for the growth of aluminum nitride crystals wherein the temperature is between 1,800* and 2, 100* C.
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4. A method as set forth in claim 1 for the growth of mixed crystals of silicon carbide and aluminum nitride wherein the temperature is between 2,100* and 2,300* C.
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5. A method as set forth in claim 1 wherein the gas atmosphere includes an inert gas-containing acceptor or donor impurities for the aluminum nitride.
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6. A method as set forth in claim 1 wherein the silicon carbide crystal is separated from the aluminum nitride epitaxial layer.
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