PELTIER-EFFECT HEAT PUMP
First Claim
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1. A Peltier device comprising a Peltier pile including a plurality of Peltier conductors and copper bridges interconnecting same;
- an electrically and thermally conductive heat exchanger around said pile, said copper bridges and said heat exchanger having confronting surfaces; and
at least one semiconductor layer between said surfaces of said pile and said heat exchanger forming a barrier layer defining a potential barrier precluding substantial electrical conduction at permitting thermal conduction between said pile and said heat exchanger.
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Abstract
A Peltier-effect pile is mounted in a heat exchanger or heat sink with semiconductive barrier layers insulating the Peltier electrodes from the metal of the heat sink. The semiconductive layers are poled electrically or biased to minimize electrical conductivity thereacross but permit maximum heat flow between the Peltier pile and the heat exchange jacket.
126 Citations
6 Claims
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1. A Peltier device comprising a Peltier pile including a plurality of Peltier conductors and copper bridges interconnecting same;
- an electrically and thermally conductive heat exchanger around said pile, said copper bridges and said heat exchanger having confronting surfaces; and
at least one semiconductor layer between said surfaces of said pile and said heat exchanger forming a barrier layer defining a potential barrier precluding substantial electrical conduction at permitting thermal conduction between said pile and said heat exchanger.
- an electrically and thermally conductive heat exchanger around said pile, said copper bridges and said heat exchanger having confronting surfaces; and
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2. The device defined in claim 1 wherein a plurality of semiconductive layers are disposed one above another to form a plurality of barrier layers between said pile and said heat exchanger.
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3. The device defined in claim 1, further comprising means for electrically biasing said semiconductor layer to increase said potential barrier.
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4. The device defined in claim 1 wherein said semiconductor layer is disposed upon said surface of said heat exchanger.
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5. The device defined in claim 1 wherein said semiconductor layer is disposed upon said surface of said copper bridges.
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6. The device defined in claim 1 wherein said heating exchanger is provided with fins extending away from said pile.
Specification
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Current AssigneeHelmut Hubert
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Original AssigneeHelmut Hubert
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InventorsHubert, Helmut
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Primary Examiner(s)Wye, William J.
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Application NumberUS05/068,189Time in Patent Office505 DaysField of Search62/3 136/203,204US Class Current62/3.2CPC Class CodesF25B 21/02 using Peltier effect; using...F25B 2321/023 Mounting details thereofH10N 10/13 characterised by the heat-e...
