EPITAXIAL DEPOSITION METHOD

• US 3,635,757 A
• Filed: 04/01/1969
• Issued: 01/18/1972
• Est. Priority Date: 07/29/1965
• Status: Expired due to Term

• Current Assignee: SunEdison, Inc.
• Original Assignee: Darrell M. Harris
• Inventors: Harris, Darrell M.
• Primary Examiner(s): Jarvis, William L.
• Application Number:
  US04/841,167
• Time in Patent Office: 1,022 Days
• Field of Search: 117/201,16A 148/175 118/48,49.5
• US Class Current: 117/97
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor

Abstract

A method for the epitaxial deposition of epitaxial coatings on a semiconductor member. The method comprises the supporting of semiconductor members on a bridge-type element and introducing the bridge element into a reactor housing having three chambers. The bridge is placed in a first chamber where a purging gas is introduced for purposes of purging the semiconductor member. The bridge is then placed in a second chamber which is isolated from the first chamber and a purging gas is introduced into the second chamber for further purging the semiconductor member. Finally, the bridge is passed into a third chamber which is isolated from the first and second chambers. Feed gases are introduced into the third chamber for causing an epitaxial coating material to be deposited on the semiconductor member. The bridge is then removed from the third chamber and through the first and second chambers to the atmosphere external to each of said chambers.

Claims

2. The method of claim 1 further characterized in that a purging gas is introduced into said third chamber for purging the atmosphere thereof after said supportive structure has been passed into said third chamber.

3. The method of claim 1 further characterized in that a purging gas is again introduced into said first chamber prior to removing said supportive structure and semiconductor member from said first chamber.