PRODUCTION OF SEMICONDUCTOR MATERIAL
First Claim
2. The method of claim 1 wherein said coupling segment comprises a segment of said starting filament having a reduced diameter.
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Abstract
When producing semiconductor bodies by a process of depositing semiconductor material from a gaseous mixture on an elongated crystalline semiconductor starting filament held between two laterally fixed supports, lateral stresses in the filaments are removed by allowing substantially friction-free, lateral movement of the filament as it is heated prior to the vapor deposition. This movement is allowed by melting a coupling segment between the filament and at least one of the supports to thereby allow lateral deformation of the coupling segment as any lateral stress of the filament is relieved. When this method is coupled with conventional means of relieving longitudinal stress in the filament, perfection in grown semiconductor bodies is maintained.
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Citations
17 Claims
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2. The method of claim 1 wherein said coupling segment comprises a segment of said starting filament having a reduced diameter.
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3. The method of claim 2 wherein said melting is caused by passing electric current through said filament.
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4. The method of claim 1 wherein said coupling segment comprises a narrowed portion of semiconductor material held in contact with one of said filament.
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5. The method of claim 4 wherein said melting is caused by passing electric current through said filament.
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6. The method of claim 1 wherein said coupling segment comprises a fusable metal.
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7. The method of claim 6 wherein said melting is caused by passing electric current through said filament.
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8. The method of claim 6 wherein said fusable metal is selected from tin and tin alloys.
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9. The method of claim 1 wherein said coupling segment comprises a portion of said starting filament which is heated to its melting temperature by the action of an RF coil.
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10. The method of claim 1 wherein said melting is caused by heating said coupling segment with an RF coil.
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11. The method of claim 1 wherein said starting filament is silicon.
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12. An apparatus for producing a body of semiconductor material by vapor phase deposition comprising:
- a. an enclosed reaction chamber;
b. inlet conduit means for introducing vaporous reactants to the interior of said enclosed reaction chamber;
C. outlet conduit means for conducting vapors from the interior of said enclosed reaction chamber;
d. a pair spaced-apart electrode chuck means for holding an elongated semiconductor filament within said enclosed reaction chamber;
e. means to pass electric current through said electrode chuck means; and
f. coupling means adapted to couple said filament with at least one of said electrode chucks comprising a fusable member to laterally deform upon heating to release any lateral stress in said filament.
- a. an enclosed reaction chamber;
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13. The apparatus of claim 12 further comprising means to relieve longitudinal stresses in said filament as it is heated.
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14. The apparatus of claim 12 wherein said coupling means comprises a heater adapted to intensely heat a small section of said filament.
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15. The apparatus of claim 14 wherein said heater comprises an RF coil positioned around said filament.
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16. The apparatus of claim 12 wherein said coupling means comprises a pointed semiconductor segment extending from one of said electrode chuck means and adapted to contact one end of said filament extending from the other of said electrode chuck means.
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17. The apparatus of claim 12 wherein said coupling means comprises a composite chuck member adapted to seat within one of said electrode chuck members and extend therefrom to receive one end of said filament, and having a fusable midportion adapted to deform when electric current is passed therethrough.
Specification