A LAMINATED SEMICONDUCTOR STRUCTURE

• US 3,648,121 A
• Filed: 07/03/1968
• Issued: 03/07/1972
• Est. Priority Date: 09/06/1967
• Status: Expired due to Term

• Current Assignee: Masanobu Suenaga, Tadao Dengo, Takahiro Sawano, Takehiko Kobayashi, Tetsuo Machii, Tetsuzo Nakai
• Original Assignee: Masanobu Suenaga, Tadao Dengo, Takahiro Sawano, Takehiko Kobayashi, Tetsuo Machii, Tetsuzo Nakai
• Inventors: Sawano, Takahiro, Suenaga, Masanobu, Machii, Tetsuo, Kobayashi, Takehiko, Dengo, Tadao, Nakai, Tetsuzo
• Primary Examiner(s): Huckert, John W.
• Assistant Examiner(s): Wojciechowicz, E.
• Application Number:
  US04/742,292
• Time in Patent Office: 1,343 Days
• Field of Search: 317/234
• US Class Current: 257/700
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/01 Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3157 Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 25/03 all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
• CPC Class Codes: H01L 29/00 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02K 11/05 Rectifiers associated with casings, enclosures or brackets

Abstract

A semiconductor apparatus comprising a first and a second electrode substrate arranged substantially in parallel to each other, a semiconductor element containing a plurality of electrode members located between and opposite to the first and second electrode substrates, a layer of organic adhesive material inserted between the first and second electrode substrates for their integral bonding, and a means for connecting the first and second electrode substrates with the aforesaid plurality of electrode members mechanically as well as electrically.

Claims

2. A semiconductor structure according to claim 1 wherein one of the two electrode plates is provided with a recess, said semiconductor element being deposited on the inner bottom surface of the recess so as to electrically connect said bottom surface to one of the electrodes of said semiconductor element.

3. A semiconductor structure according to claim 1 wherein the first electrode plate includes first and second electrically insulated conductive plates disposed in substantially the same plane, a first set of electrodes belonging to a first group of semiconductor diode elements all of the same polarity connected to said first conductive plate, another first set of electrodes belonging to a second group of semiconductor diode elements all of the opposite polarity connected to said second conductive plate;

said second electrode plate including a plurality of mutually insulated conductive units arranged in substantially the same plane and approximately parallel with the first and second conductive plates, said conductive units connecting each one of the second set of electrodes of the first group of semiconductor diode elements with each one of the second set of electrodes of the second group of semiconductor diode elements.

4. A semiconductor structure according to claim 1 wherein the first electrode plate includes first, second and third mutually insulated conductive plates in substantially the same plane, first, second and third groups of diode elements respectively provided in the first, second and third conductive plates, each group of diode elements comprising two diodes to which there are electrically connected electrodes of opposite polarities, said second elEctrode plate including two mutually insulated conductive units, one of the units connecting the electrodes of one polarity associated with the first, second and third groups of diode elements, the other of said units connecting the electrodes of the opposite polarity associated with said first, second and third groups of diode elements.

5. A semiconductor structure according to claim 1 wherein the semiconductor elements are surrounded with a horseshoe shaped electrically insulating intermediate envelope formed thicker than the main portion of said semiconductor elements and disposed between the two electrode plates and the intermediate envelope, the two electrode plates being bonded together by the organic adhesive layer to seal the semiconductor element.

6. The semiconductor structure of claim 1 wherein one of the electrodes of the semiconductor element is disposed perpendicular to the electrode plates with one end thereof running through a hole provided in one of the electrode plates and being soldered to the electrode plate.

7. A semiconductor structure according to claim 3 wherein at least one of the conductive members provided in the electrode plates includes a metal-clad laminated plate having a conductive passageway formed therein.

8. A semiconductor structure according to claim 3 wherein each of the first and second groups includes three diodes.

9. A semiconductor structure according to claim 3 wherein the conductive plates formed on one of the electrode plates are respectively provided with a recess shaped to receive one of the electrodes of one of the semiconductor elements connected to the conductive plate, said electrode received in the recess being brazed to the recess.

10. The semiconductor structure according to claim 4 wherein the conductive plates included in one of the electrode plates are respectively provided with a recess shaped to receive one of the electrodes of one of the semiconductor elements connected to the conductive plate, said electrode received in the recess being brazed to the recess.