POST HEATING OF SPUTTERED METAL OXIDE FILMS

• US 3,655,545 A
• Filed: 07/02/1970
• Issued: 04/11/1972
• Est. Priority Date: 02/28/1968
• Status: Expired due to Term

• Current Assignee: Frank H. Gillery, Jean P. Pressau
• Original Assignee: Frank H. Gillery, Jean P. Pressau
• Inventors: Pressau, Jean P., Gillery, Frank H.
• Primary Examiner(s): Mack, John H.
• Assistant Examiner(s): Kanter, Sidney S.
• Application Number:
  US05/056,117
• Time in Patent Office: 649 Days
• Field of Search: 204/192
• US Class Current: 204/192.29
• CPC Class Codes: C03C 17/23 Oxides C03C17/02 takes precedence
• CPC Class Codes: C03C 17/2453 Coating containing SnO2
• CPC Class Codes: C03C 2217/211 SnO2
• CPC Class Codes: C03C 2217/215 In2O3
• CPC Class Codes: C03C 2217/231 In2O3/SnO2
• CPC Class Codes: C03C 2218/154 by sputtering
• CPC Class Codes: C03C 23/007 by thermal treatment
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/58 After-treatment
• CPC Class Codes: C23C 14/5806 Thermal treatment
• CPC Class Codes: C23C 14/5846 Reactive treatment

Abstract

This invention relates to a novel method of producing electroconductive metal oxide films by cathodic sputtering. It especially pertains to a method of increasing the electroconductivity of sputtered metal oxide films by mildly reducing said films. The reduction step follows sputtering and generally involves heating the metal oxide film in a nonoxidizing or reducing atmosphere for a sufficient period of time to reduce the oxygen content of said film by a minor amount but without substantially reducing the oxide film to metallic form.

Claims

2. The method of claim 1 wherein the post heating is conducted in vacuo.

3. The method of claim 1 wherein the post heating is conducted in a reducing atmosphere.

4. The method of claim 1 wherein the post heating is conducted in a hydrogen-containing atmosphere.

5. The method of claim 1 wherein the substrate is glass.

6. The method of claim 1 wherein post heating is conducted at a temperature of about 240* C. to about 340* C.

7. The method of claim 1 wherein the metal cathode contains indium.

8. The method of claim 7 wherein the post heating is at a temperature of about 240* C. to about 340* C. for less than about two hours.

9. The method of claim 1 wherein the metal cathode contains a greater quantity of indium that that of tin.

10. The method of claim 9 wherein the metal cathode contains a maximum of 20 percent by weight of tin and the balance indium.