SOLID STATE MICROWAVE OSCILLATOR WITH CERAMIC CAPACITANCE TEMPERATURE COMPENSATING ELEMENT

• US 3,668,551 A
• Filed: 11/02/1970
• Issued: 06/06/1972
• Est. Priority Date: 11/04/1969
• Status: Expired due to Term

• Current Assignee: Akihiro Kondo
• Original Assignee: Akihiro Kondo
• Inventors: Kondo, Akihiro
• Primary Examiner(s): Lake, Roy
• Assistant Examiner(s): Grimm, Siegfried H.
• Application Number:
  US05/086,141
• Time in Patent Office: 582 Days
• Field of Search: 331/96,97,17R,17G,109,176 333/82BT,83T 317/258,259,247
• US Class Current: 331/96
• CPC Class Codes: H03B 2009/126 using impact ionization avalanche transit time [IMPATT] diodes
• CPC Class Codes: H03B 9/145 the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity H03B9/141 - H03B9/143, H03B9/147, H03B9/148 take precedence

Abstract

An enclosed Gunn effect diode is disposed within a microwave resonant cavity. A capacitive element of dielectric ceramic such as titanium oxide having a negative temperature coefficient of capacitance is attached to the insulating portion of the enclosure for the diode. Alternatively the enclosure for the diode may be partly or entirely formed of such a dielectric ceramic.

Claims

2. A solid state microwave oscillator according to claim 1, wherein said enclosure comprises a tubular element of insulating material and said capacitative element comprises a ceramic element extending along a wall of said tubular element between said electrodes.

3. A solid state microwave oscillator according to claim 1, wherein said capacitative element forms at least part of said hollow enclosure extending between said electrodes.

4. A solid state microwave oscillator according to claim 1, wherein said solid state microwave oscillation element is a Gunn effect diode.

5. A solid state microwave oscillator according to claim 1, wherein said solid state microwave oscillation element is an avalanche-transit time effect diode.

6. A solid state microwave oscillator according to claim 1, wherein said capacitative element is of a titanium oxide ceramic material.

7. A solid state microwave oscillator according to claim 1, wherein said capacitative element is of a magnesium titanate ceramic material.

8. A solid state microwave oscillator comprising a resonant cavity, a semiconductor microwave oscillation unit disposed in said cavity and comprising spaced electrodes, a hollow enclosure of insulating material extending between said electrodes and an oscillation element within said enclosure, and a ceramic capacitance temperature compensating element extending along a wall of said enclosure between said electrodes, said capacitative element having a selected negative temperature coefficient to compensate for changes of temperature of said oscillator.

9. A solid state microwave oscillator according to claim 8, wherein said capacitative element is a strip of titanium oxide ceramic material.

10. A solid state microwave oscillator according to claim 8, wherein said capacitative element is a strip of magnesium titanate ceramic material.

11. A solid state microwave oscillator comprising a resonant cavity, a semiconductor microwave oscillation unit disposed in said cavity and comprising spaced electrodes, a hollow cylindrical enclosure of dielectric material extending between said electrodes and an oscillation element within said enclosure, said enclosure being formed at least in part of ceramic material constituting a ceramic capacitative temperature compensating element having a selected negative temperature coefficient to compensate for changes of temperature of said oscillator.

12. A solid state microwave oscillator according to claim 11, wherein said enclosure is formed in part of a titanium oxide ceramic material.

13. A solid state microwave oscillator according to claim 11, wherein said enclosure is formed in part of magnesium titanate ceramic material.