TEMPERATURE COMPENSATED SEMICONDUCTOR RESISTOR CONTAINING NEUTRAL INACTIVE IMPURITIES

• US 3,683,306 A
• Filed: 10/28/1969
• Issued: 08/08/1972
• Est. Priority Date: 11/19/1968
• Status: Expired due to Term

• Current Assignee: Kornelis Bulthuis
• Original Assignee: Kornelis Bulthuis
• Inventors: Bulthuis, Kornelis
• Primary Examiner(s): Rodney D. Bennett, Jr.
• Assistant Examiner(s): R. Kinberg
• Application Number:
  US04/870,047
• Time in Patent Office: 1,015 Days
• Field of Search: 338/3,7,8 317/235AQ
• US Class Current: 338/7
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H01L 29/8605 Resistors with PN junctions
• CPC Class Codes: Y10S 148/049 Equivalence and options
• CPC Class Codes: Y10S 438/914 Doping
• CPC Class Codes: Y10S 438/934 Sheet resistance, i.e. dopant parameters

Abstract

A temperature compensated semiconductor resistor is described wherein electrically inactive neutral impurities are included in the semiconductor. The neutral impurities do not contribute free carriers to offset mobility reduction due to lattice scattering, but instead provide an impurity scattering dependence that temperature compensates.

Claims

1. A semiconductor device having a semiconductor body containing a resistance element, said resistance element comprising a semiconductor region and spaced connections to the region, said semiconductor region containing electrically active impurities determining its conductivity type and producing free charge carriers therein whereby said resistance element has a given temperature coefficient of resistance, said semiconductor region also containing electrically inactive neutral impurities in an amount producing a significant reduction of the said temperature coefficient of resistance.

2. A semiconductor device as set forth in claim 1 wherein the semiconductor region is a substance selected from the group consisting of silicon, germanium and mixed crystals thereof, and the neutral impurities are elements selected from the group consisting of tin and lead.

3. A semiconductor device as set forTh in claim 2 wherein the electrically active impurities are donors or acceptors.

4. A semiconductor device having a semiconductor body containing a resistance element, said resistance element comprising a semiconductor region and spaced connections to the region, said semiconductor region containing electrically active impurities determining its conductivity type and producing free charge carriers therein whereby said resistance elements has a given temperature coefficient of resistance, said semiconductor region also containing an additional concentration of said impurities in considerable excess of the free charge carrier concentration present such that neutral impurities are formed producing a significant reduction of the said temperature coefficient of resistance.

5. A semiconductor device as set forth in claim 4 wherein the semiconductor region is of silicon, and the impurities are elements selected from the group consisting of gallium, boron, aluminum, indium and antimony.

6. A semiconductor device as set forth in claim 5 wherein the additional concentration is ion implanted.