SEMICONDUCTOR MATERIAL CUTTING APPARATUS AND METHOD OF MAKING THE SAME

• US 3,691,707 A
• Filed: 11/12/1969
• Issued: 09/19/1972
• Est. Priority Date: 11/12/1969
• Status: Expired due to Term

• Current Assignee: Henry R Von Arx, Karl J. Zueger
• Original Assignee: Henry R Von Arx, Karl J. Zueger
• Inventors: Von Arx, Henry R., Zueger, Karl J.
• Primary Examiner(s): Simpson, Othell M.
• Application Number:
  US04/876,000
• Time in Patent Office: 1,042 Days
• Field of Search: 51/206,309,295,293 30/347 125/15 144/235 85/5,6,8
• US Class Current: 451/541
• CPC Class Codes: B24D 18/0018 by electrolytic deposition
• CPC Class Codes: B28D 5/022 by cutting with discs or wheels
• CPC Class Codes: H01L 21/3043 Making grooves, e.g. cutting
• CPC Class Codes: Y10T 29/4994 Radially expanding internal tube
• CPC Class Codes: Y10T 83/04 Processes

Abstract

Improved rotary cutting apparatus and method of making the same incorporates a thin deposited layer of diamond particles in nickel disposed about the periphery of a rotatably body. The deposited layer is exposed beyond the periphery of the body during the fabrication process to provide high-speed cutting apparatus for use on semiconductor materials.

Claims

1. Cutter apparatus comprising a rotatable body having a relatively thin surface near the periphery thereof which is substantially normal to the rotational axis of the body;

and an electroformed unsupported layer of a matrix of diamond particles in a nickel binder disposed on said surface, said layer having substantially parallel sides protruding radially beyond the periphery of said body and forming a relatively thin homogeneous cutting blade.

2. Cutter apparatus as in claim 1 wherein said layer is approximately 1 mil thick.

3. Cutter apparatus as in claim 2 wherein the major radius of said layer is greater than the radius of the periphery of said body by at least 10 mils for cutting through such thickness of a material.

4. Cutter apparatus as in claim 1 wherein said electroformed layer is from nickel sulfamate bath.