ELECTRONIC COMPONENTS HAVING IMPROVED IONIC STABILITY

• US 3,710,205 A
• Filed: 04/09/1971
• Issued: 01/09/1973
• Est. Priority Date: 04/09/1971
• Status: Expired due to Term

• Current Assignee: John G. Swanson
• Original Assignee: John G. Swanson
• Inventors: Swanson, John G.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/132,643
• Time in Patent Office: 641 Days
• Field of Search: 317/234F,235B,235F,235AG
• US Class Current: 257/66
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 29/00 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: Y10S 148/049 Equivalence and options
• CPC Class Codes: Y10S 148/053 Field effect transistors fets
• CPC Class Codes: Y10S 148/118 Oxide films
• CPC Class Codes: Y10S 148/12 Photocathodes-Cs coated and solar cell
• CPC Class Codes: Y10S 148/15 Silicon on sapphire SOS

Abstract

This disclosure is concerned with electronic components having improved ionic stability. The improved stability is achieved by the doping of silicon oxide films and layers in the component. Suitable doping materials are selected from a group of material having divalent large ionic radii atoms.

Claims

2. The device of claim 1 in which the doping material comprises from 0.5 percent to 5 percent, by volume, of the body of silicon oxide.

3. A field effect transistor comprising a source contact and a drain contact spaced apart and disposed on a substrate, a layer of a semiconductor material disposed between said source and drain contacts and in physical contact therewith, a layer of a doped silicon oxide disposed over at least a portion of said layer of semiconductor material and a gate contact disposed on said layer of doped silicon oxide between said source and drain electrodes, said silicon oxide layer being doped with at least one divalent material, said divalent material being selected from the group consisting of barium, lead, strontium, calcium and oxides thereof, and having an atomic radii of at least 0.9 A said divalent material comprising from 0.1 percent to 20 percent, by volume, of said layer of silicon dioxide.

4. The field effect transistor of claim 3 in which the doping material comprises from 0.5 percent to 5 percent, by volume, of the body of silicon oxide.

5. The field effect transistor of claim 4 in which the doping material is barium oxide.

6. A semiconductor device comprising a body of semiconductor material having at least two adjacent regions of opposite type semiconductivity, a p-n junction between said two adjacent regions, said p-n junction extending to at least one surface of said body of semiconductor material, a layer of doped silicon oxide disposed over at least that portion of the surface where the p-n junction terminates, said silicon oxide layer being doped with from 0.1 percent to 20 percent, by volume, with at least one divalent material selected from the group consisting of barium, lead, strontium, calcium and oxides thereof and said divalent material having an atomic radii of at least 0.9 A.