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SILICON CARBIDE LAMP MOUNTED ON A CERAMIC OF POOR THERMAL CONDUCTIVITY

  • US 3,715,636 A
  • Filed: 01/03/1972
  • Issued: 02/06/1973
  • Est. Priority Date: 01/03/1972
  • Status: Expired due to Term
First Claim
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1. A silicon carbide lamp construction comprising a silicon carbide light-emitting diode having a PN junction formed with one or more dopants including boron or other element which produces a similarly deep acceptor level, said PN junction being between and substantially parallel to two surfaces of the diode, a support member of porous ceramic or other material of similarly low thermal conductivity, means mounting said diode on said support member, and means making a pair of electrical connections to said diode at opposite sides of the PN junction so that current can be made to flow through said PN junction.

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