METHOD OF MAKING THERMO-COMPRESSION-BONDED SEMICONDUCTOR DEVICE
First Claim
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2. The method of claim 1, wherein said vapor-deposited layer is a layer of an alloy of gold containing 1 to 10 percent of chromium by weight.
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Abstract
In making a semiconductor device comprising a die of silicon, germanium or gallium arsenide, the bonding of the die onto a metal header (i.e., holding member) is made firmly without insertion of a conventional thin gold film therebetween, by depositing gold onto the bonding face of a slice, which is to be cut into the die, in such a manner that at least the surface of the deposited layer is gold or an alloy of gold containing small amounts of an additive.
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5 Claims
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2. The method of claim 1, wherein said vapor-deposited layer is a layer of an alloy of gold containing 1 to 10 percent of chromium by weight.
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3. The method of claim 1, wherein said vapor-deposited layer is a layer of an alloy of gold containing 1 to 10 percent of silicon by weight.
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4. The method of claim 1, wherein said vapor deposited layer is a layer of an alloy of gold containing 1 to 15 percent of germanium by weight.
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5. The method of claim 1, further comprising the step of sand-blasting the bonding face of the slice prior to vapor deposition.
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