SEMICONDUCTOR DEVICE PACKAGE WITH ENERGY ABSORBING LAYER
First Claim
2. A semiconductor device as recited in claim 1 wherein said particles are tungsten carbide.
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Abstract
There is disclosed a semiconductor device comprising a body of semiconductor material having at least one region of P conductivity type and a second region of N conductivity type defining a P-N junction therebetween. The body is bonded to a header having electrically isolated terminals extending therefrom. A lead wire is bonded to at least one of said conductivity regions and to one of said terminals. A closure member is secured to said header and the closure member and the header are surrounded by an energy absorbing layer of high atomic number particle impregnated resilient material. The particles have a diameter of between 0.25 and 1.0 mil and are approximately 50 percent by volume of said layer. The resilient material is preferably a highly plastisized polyvinyl chloride and the high atomic number particles are preferably tungsten carbide.
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Citations
5 Claims
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2. A semiconductor device as recited in claim 1 wherein said particles are tungsten carbide.
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3. A semiconductor device as recited in claim 2 wherein said particles have an atomic number greater than 60 and a density greater than 12.
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4. A semiconductor device as recited in claim 3 wherein said resilient matrix material is a highly plastisized polyvinyl chloride.
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5. A semiconductor device as recited in claim 4 wherein said particles are tungsten carbide.
Specification