MONOLITHIC BI-POLAR SEMICONDUCTOR DEVICE EMPLOYING CERMET FOR BOTH SCHOTTKY BARRIER AND OHMIC CONTACT
First Claim
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1. A monolithic semiconductor device, comprising:
- a. a body of semiconductor having a lightly doped region defining a collector, a first heavily doped region defining a base, and a second heavily doped region defining an emitter;
b. said base and collector regions being contiguous with each other and said emitter region being contiguous with a portion of said base region;
c. a first coating of cermet material on contiguous surface areas of said base and collector regions forming Schottky barrier contact with said collector region and ohmic contact with said base region;
d. a second coating of cermet material on a surface of said emitter region forming ohmic contact therewith;
e. a heavily doped region in said collector region defining a contact area; and
f. a third coating of cermet material on said collector contact area forming ohmic contact therewith.
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Abstract
A layer of cermet material, deposited in a single processing step, connects the base and collector regions of a bipolar transistor to form a Schottky barrier diode therebetween; makes ohmic contact to highly doped shallow diffused regions such as the emitter and collector contact areas; provides a barrier by preventing the interaction of contact metal and the shallow diffused semiconductor regions; and produces a thin film resistor of low parasitic capacitance for connection to the transistor.
9 Citations
16 Claims
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1. A monolithic semiconductor device, comprising:
- a. a body of semiconductor having a lightly doped region defining a collector, a first heavily doped region defining a base, and a second heavily doped region defining an emitter;
b. said base and collector regions being contiguous with each other and said emitter region being contiguous with a portion of said base region;
c. a first coating of cermet material on contiguous surface areas of said base and collector regions forming Schottky barrier contact with said collector region and ohmic contact with said base region;
d. a second coating of cermet material on a surface of said emitter region forming ohmic contact therewith;
e. a heavily doped region in said collector region defining a contact area; and
f. a third coating of cermet material on said collector contact area forming ohmic contact therewith.
- a. a body of semiconductor having a lightly doped region defining a collector, a first heavily doped region defining a base, and a second heavily doped region defining an emitter;
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2. The invention according to claim 1, wherein said cermet material consists of 65 to 50% chromium and 35 to 50% silicon monoxide by weight.
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3. The invention according to claim 2, wherein said cermet material consists essentially of 58% chromium and 42% silicon monoxide.
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4. The invention according to claim 1, wherein said cermet material consists essentially of 60 to 40% silicon and 40 to 60% chromium by weight.
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5. The invention according to claim 4, wherein said cermet material consists essentially of 50% silicon and 50% chromium.
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6. The invention according to claim 1, wherein said lightly doped regions have an impurity concentration of 8.5 X 1016 atoms/cm3 or less.
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7. The invention according to claim 6, wherein said heavily doped regions have an impurity concentration of 5 X 1018 atoms/cm3 or greater.
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8. The invention accOrding to claim 1, and further including a layer of contact metal on said cermet coatings, said metal layer forming a common contact to said collector and base regions and separate contacts to said emitter region and said collector contact area.
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9. The invention according to claim 8 and further including a passivating oxide layer on a surface of said semiconductor body;
- said oxide layer being formed with openings defining the regions of said semiconductor body where said cermet coatings and said contact metal layers are deposited.
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10. The invention according to claim 9 and further including a fourth coating of cermet material on said oxide layer and spaced from said first, second, and third cermet coatings;
- and a layer of contact metal joining said fourth cermet coating and one of said contact metal layers on the first three mentioned cermet coatings;
said fourth cermet coating functioning as a thin film resistor in circuit with said monolithic semiconductor device.
- and a layer of contact metal joining said fourth cermet coating and one of said contact metal layers on the first three mentioned cermet coatings;
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11. The invention according to claim 10, wherein said cermet coatings consist essentially of a mixture of chromium and silicon monoxide about 300 angstroms thick with a specific resistivity of 3 X 10 3 ohm-cm.
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12. A microelectronic integrated circuit, comprising:
- a. a body of semiconductor material including a collector region of a first conductivity type;
b. an annular base region of the opposite conductivity type from said first type diffused in said collector region and surrounding an inner collector region of said first conductivity type;
c. an emitter region of said first conductivity type diffused in a portion of said annular base region;
d. a layer of cermet material on at least a surface portion of said inner collector region and extending to opposite adjacent surface portions of said Annular base region;
e. said cermet material forming a Schottky barrier contact with said inner collector region and ohmic contact with said annular base region; and
f. a layer of conductive material on said cermet material.
- a. a body of semiconductor material including a collector region of a first conductivity type;
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13. The invention according to claim 12 and further including a layer of cermet material on said emitter region;
- and a layer of conductive material on said last-mentioned cermet layer.
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14. The invention according to claim 13, and further including a heavily doped collector contact region diffused in said collector region;
- and a layer of cermet material followed by a layer of conductive material deposited on said collector contact region.
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15. The invention according to claim 14, wherein said cermet layer consists essentially of 65 to 50% chromium and 35% to 50% silicon monoxide by weight.
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16. The invention according to claim 14, wherein said cermet layer consists essentially of 60 to 40% silicon and 40 to 60% chromium by weight.
Specification