PHASED ARRAY ANTENNA CONTROLLER
First Claim
1. In a radar system utilizing a plurality of like phased array antenna assemblies, each one thereof including a matrix of antenna elements and associated semiconductor phase shifters adapted to form and direct a beam of radio frequency energy, each one of such phase shifters incorporating p-i-n diodes actuable by a different one of a plurality of driver amplifiers, the improvement comprising:
- a. means for selectively enabling the p-i-n diodes incorporated in each different matrix of semi-conductor diode phase shifters to be actuated, such means including at least one different silicon controlled rectifier disposed in circuit between all of the driver amplifiers and a first electrode of all of the p-i-n diodes in each different matrix of semiconductor phase shifters;
b. means for connecting a second electrode of corresponding p-in diodes in each different matrix of semiconductor phase shifters to each different one of the driver amplifiers; and
c. control signal generating means for providing a control signal to the at least one different silicon control rectifier in circuit with the p-i-n diodes in the matrix of semiconductor phase shifters to be actuated.
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Abstract
A phased array antenna arrangement which includes a plurality of independently operable phased arrays is disclosed. The phase shifters in each such array are connected to appropriate ones of a set of driver amplifiers through an electronic switching arrangement which is operable as desired to permit only the phase shifters in a selected one, or selected ones, of the phased arrays to be actuated.
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Citations
1 Claim
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1. In a radar system utilizing a plurality of like phased array antenna assemblies, each one thereof including a matrix of antenna elements and associated semiconductor phase shifters adapted to form and direct a beam of radio frequency energy, each one of such phase shifters incorporating p-i-n diodes actuable by a different one of a plurality of driver amplifiers, the improvement comprising:
- a. means for selectively enabling the p-i-n diodes incorporated in each different matrix of semi-conductor diode phase shifters to be actuated, such means including at least one different silicon controlled rectifier disposed in circuit between all of the driver amplifiers and a first electrode of all of the p-i-n diodes in each different matrix of semiconductor phase shifters;
b. means for connecting a second electrode of corresponding p-in diodes in each different matrix of semiconductor phase shifters to each different one of the driver amplifiers; and
c. control signal generating means for providing a control signal to the at least one different silicon control rectifier in circuit with the p-i-n diodes in the matrix of semiconductor phase shifters to be actuated.
- a. means for selectively enabling the p-i-n diodes incorporated in each different matrix of semi-conductor diode phase shifters to be actuated, such means including at least one different silicon controlled rectifier disposed in circuit between all of the driver amplifiers and a first electrode of all of the p-i-n diodes in each different matrix of semiconductor phase shifters;
Specification
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- Resources
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Current AssigneeChristos J. Georgopoulos
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Original AssigneeChristos J. Georgopoulos
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InventorsGeorgopoulos, Christos J.
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Primary Examiner(s)Tubbesing, T. H.
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Application NumberUS05/111,423Time in Patent Office855 DaysField of Search343/5R,1SAUS Class Current342/157CPC Class CodesH01Q 3/40 with phasing matrix
