INTEGRATED PHASE-SHIFTING MICROCIRCUIT
First Claim
2. A phase shifter as defined in claim 1 wherein said semiconductor material is silicon and said nonconductive layers consist of silicon oxide.
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Abstract
A phase shifter for microwaves is monolithically formed from a silicon panel with a grounded metallic bottom layer and a metallic top layer defining a central conductor strip longitudinally subdivided into several line segments by junctions with reactive shunts spaced a quarter wavelength apart. Each shunt path includes the series combination of a condenser and a diode both integral with the monobloc panel. Successive diodes are provided, in pairs, with common biasing leads for alternately blocking and unblocking same to modify the loading effect of the shunt reactances, thereby enabling the selective introduction of a predetermined phase-shift increment per line segment.
12 Citations
19 Claims
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2. A phase shifter as defined in claim 1 wherein said semiconductor material is silicon and said nonconductive layers consist of silicon oxide.
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3. A phase shifter as defined in claim 1 wherein said one of said heavily doped portions is common to two diodes forming part of a pair of consecutive shunt paths.
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4. A phase shifter as defined in claim 1 wherein said one of said heavily doped portions is disposed adjacent said one major surface of said panel, the latter being provided with an incision extending to said one of said doped portions from said opposite major surface, said conductive connection including a metallic lining of said incision.
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5. A phase shifter as defined in claim 1, in combination with a source of high-frequency oscillations connected across said metallic layers, the length of each line segment being substantially equal to a quarter wavelength of said oscillations.
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6. A phase shifter as defined in claim 1 wherein said one of said metallic layers is said first metallic layer, said conductive connection including part of said second metallic layer.
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7. A phase shifter as defined in claim 7 wherein said one of said heavily doped portions has an extension protruding through the body of said panel into the immediate vicinity of said second nonconductive layer, said part of said second metallic layer penetrating said second nonconductive layer and contacting said extension.
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8. A phase shifter as defined in claim 8 wherein said panel is formed on the side of said first metallic layer with a recess substantially reducing the thickness of said body in the region of said extension.
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9. A phase shifter as defined in claim 9 wherein said recess extends beyond the region of said extension into a section of said body containing said diode.
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10. A phase shifter as defined in claim 1 wherein said biasing means includes a bypass condenser grounding said conductive connection for high frequencies, said bypass condenser being integral with said panel.
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11. A phase shifter as defined in claim 11 wherein said one of said doped portions is disposed adjacent said first nonconductive layer and said conductive connection includes part of said second metallic layer, said bypass condenser including a uniformly doped portion of said semiconductor material extending from the region of said first metallic layer through the body of said panel into the immediate vicinity of said second nonconductive layer adjacent said part of said second metallic layer.
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12. A phase shifter as defined in claim 1 wherein each of said shunt paths includes at least one transverse conductor forming part of said second metallic layer and extending laterally from said strip at a respective branch point, an extremity of said transverse conductor making conductive contact with one of said heavily doped portions of an associated diode.
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13. A phase shifter as defined in claim 13 wherein said transverse conductor is integral with said strip at said respEctive branch point and forms an inductance in series with said associated diode.
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14. A phase shifter as defined in claim 13 in combination with a source of high-frequency oscillations connected across said metallic layers, said transverse conductor having a length substantially equal to one-eighth of the free-space wavelength of said oscillations.
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15. A phase shifter as defined in claim 13 wherein the transverse conductors of consecutive shunt paths are disposed in alternate pairs on opposite sides of said strip.
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16. A phase shifter as defined in claim 13 wherein said transverse conductor approaches said strip by said extremity at said respective branch point, said associated diode being capacitively coupled to said strip at said branch point.
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17. A phase shifter as defined in claim 17 wherein the transverse conductors of adjoining branch points are provided with a conductive link at a location remote from said strip, said biasing means including said conductive link and the transverse conductors interconnected thereby.
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18. A phase shifter as defined in claim 18 wherein said conductive link is part of said second metallic layer and is provided with a bypass condenser grounding same for high frequencies.
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19. A phase shifter as defined in claim 16 wherein said biasing means includes a common control lead for the diodes associated with each of said pairs of transverse conductors.
Specification