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MEMORY SYSTEM WITH TEMPORARY OR PERMANENT SUBSTITUTION OF CELLS FOR DEFECTIVE CELLS

  • US 3,755,791 A
  • Filed: 06/01/1972
  • Issued: 08/28/1973
  • Est. Priority Date: 06/01/1972
  • Status: Expired due to Term
First Claim
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1. A memory storage system comprising:

  • a memory storage array containing storage locations, a memory address register for selecting a storage location in said memory storage array, input signal means for providing an input signal to said array, said array comprising a plurality of functionally isolated individual storage locations electrically interconnected into a main storage group and a redundant storage line a circuit coupled to the main storage group and to the redundant storage line said circuit having a first state for directing an input signal from said input signal means to a selected storage location in said main storage group and a second state for redirecting the input signal from the selected storage location in said main storage group to the redundant storage line whenever the main storage group to which the circuit is coupled contains a defective storage location, and biasing means coupled to said circuit for setting said circuit in one of said states, said circuit containing non-volatile, variable threshold devices that can be set to turn on at a selected input voltage.

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