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SCHOTTKY BARRIER TYPE FIELD EFFECT TRANSISTOR

  • US 3,767,984 A
  • Filed: 09/13/1972
  • Issued: 10/23/1973
  • Est. Priority Date: 09/03/1969
  • Status: Expired due to Term
First Claim
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1. A Schottky barrier gate field effect transistor comprising a substrate of high resistivity, an n-type gallium arsenide layer formed on said substrate;

  • source and drain electrodes attached to said gallium arsenide layer, and a gate electrode formed on a portion of the surface of said gallium arsenide layer between said source and drain electrodes, said gate electrode being made of a metal selected from the group consisting of aluminum, gold, nickel and chromium, said gallium arsenide layer having an impurity concentration ranging from 1 X 1015cm 3 to 1 X 1016cm 3 and a thickness meeting the condition given by 2 X 103cm 1/2<

    W . square root N <

    3 X 103cm 1/2 where N and W represent, respectively, said impurity concentration and the thickness of said gallium arsenide layer measured at the portion of said layer lying beneath said gate electrode, whereby said field effect transistor is enabled to function in the enhancement mode.

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