COOLING DEVICE FOR SEMICONDUCTOR COMPONENTS

• US 3,780,356 A
• Filed: 05/10/1972
• Issued: 12/18/1973
• Est. Priority Date: 02/27/1969
• Status: Expired due to Term

• Current Assignee: Nikolaus Laing
• Original Assignee: Nikolaus Laing
• Inventors: Laing, Nikolaus
• Primary Examiner(s): Huckert, John W.
• Assistant Examiner(s): James, Andrew J.
• Application Number:
  US05/252,081
• Time in Patent Office: 587 Days
• Field of Search: 317/234,1,1.5,4,100,101 174/15 165/80,105
• US Class Current: 257/714
• CPC Class Codes: H01L 23/4275 by melting or evaporation of solids
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 165/902 Heat storage

Abstract

A device for cooling a semiconductor component comprising a chamber enclosing a non-metallic crystal forming material which experiences a phase change at a temperature which corresponds to the desired operating temperature of the semiconductor component and wherein the material is in thermal communication with the semiconductor component.

Claims

1. Apparatus for controlling the temperature of a semiconductor component during start up and operating conditions, said apparatus comprising a hermetically sealed chamber in thermal communication with a portion of said semiconductor component and a solid crystalline non-metallic material in said chamber where said material has a melting temperature within the desired operating temperature of said semiconductor component during start up and operating conditions and has a thermal conductivity less than that of a metal whereby said material during operation of said semiconductor may undergo a phase change from a solid to a liquid such that heat produced by said semiconductor is absorbed by said material during said phase change.

2. A cooling device according to claim 1 wherein the phase change enthalpy of said material is greater than 40 cal/g at the desired operating temperature of said semiconductor component.

3. Apparatus according to claim 2 wherein said material comprises a hydrate of a metal hydroxide.

4. Apparatus according to claim 1 having in addition a thickener mixed with said material whereby said material will remain in a gelled state at temperatures in excess of said melting temperature.

5. Apparatus according to claim 1 wherein said material comprises two substances each having different melting temperatures wherein one said substance has a melting temperature at the desired operating temperature of said semiconductor and the other said substance has a melting temperature which is below the maximum temperature to which the semiconductor component may be subjected without damage.

6. Apparatus according to claim 1 wherein said material is one that is capable of a polymorphous phase change at the desired operating temperature of said semiconductOr component and which has a melting temperature slightly below that which is the maximum temperature the semiconductor component may be subjected without destruction.

7. Apparatus according to claim 1 wherein said semiconductor is in the form of a Peltier element having a heat emitting electrode and a heat absorbing electrode wherein said heat emitting electrode is in thermal conductive communication with said material and wherein said heat absorbing electrode is in thermal conductive communication with said portion of said component to be cooled.

8. Apparatus according to claim 1 having in addition a hollow body filled with said material with one end of said body communicating with the interior of said chamber whereby the material in the end of the hollow body furtherest away from said chamber remains in the solid phase during operation of said semiconductor component to act as a seeding material to said material in said chamber.

9. Apparatus according to claim 1 having in addition a plate containing hermetically sealed thin tubes therein wherein said tubes form said hermetically sealed chamber.