MAGNETIC DEVICES UTILIZING ION-IMPLANTED MAGNETIC MATERIALS
First Claim
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2. Process of claim 1 in which the said material evidences a net magnetostriction of approximately at least 1 X 10 6.
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Abstract
Magnetic anisotropy in oxidic magnetic materials is altered by strain which is induced by local expansion of the lattice through ion implantation. This compressional strain in the instance of a material having positive magnetostriction may result in an enhanced magnetic easy direction normal to a major surface. Exemplary rare earth iron garnet materials have been so processed as to result in a thin surface region having appropriate magnetic properties for incorporation in '"'"''"'"''"'"''"'"'bubble'"'"''"'"''"'"''"'"' devices.
25 Citations
22 Claims
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2. Process of claim 1 in which the said material evidences a net magnetostriction of approximately at least 1 X 10 6.
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3. Process of claim 2 in which the energy spectrum is such as to result in inhomogeneous ionic absorption in the direction of penetration.
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4. Process of claim 2 in which at least a portion of the said irradiation is in a direction corresponding with the channeling direction for the said material.
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5. Device produced in accordance with the process of claim 2.
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6. Process of claim 2 in which the ionic species is hydrogen.
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7. ProcesS of claim 2 in which the sign of the said magnetostriction is positive.
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8. Process of claim 7 in which the direction of the said positive magnetostriction is approximately orthogonal to the surface being bombarded.
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9. Process of claim 2 in which the said material is essentially homogeneous.
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10. Process of claim 9 in which the said material is a portion of a bulk-grown crystal.
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11. Process of claim 2 in which the said material comprises a layer on a supporting substrate.
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12. Process of claim 11 in which the said layer is crystallographically epitaxial with respect to the said substrate.
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13. Process of claim 12 in which the said layer is produced by liquid-phase epitaxy.
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14. Process of claim 12 in which the said layer is produced by chemical vapor deposition.
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15. Process of claim 12 in which the said layer evidences unique magnetic anisotropy prior to treatment.
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16. Process of claim 2 in which the irradiated surface of the said material is subjected to a variation in dosage.
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17. Process of claim 16 in which the said variation results by use of masking.
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18. Process of claim 16 where such variation results primarily by selective illumination utilizing a beam of cross-section small relative to the surface being irradiated.
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19. Process of claim 16 in which the variation is such as to produce a pattern corresponding with a relatively low coercivity region in which domain wall movement is favored.
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20. Process of claim 2 in which the said magnetic material is of an oxidic composition.
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21. Process of claim 20 in which the said material is a ferrimagnetic material of the garnet structure.
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22. Process of claim 20 in which the said material is a magnetic ferrite of the spinel structure.
Specification