VOLTAGE LEVEL SHIFTING CIRCUIT

• US 3,801,831 A
• Filed: 10/13/1972
• Issued: 04/02/1974
• Est. Priority Date: 10/13/1972
• Status: Expired due to Term

• Current Assignee: John S. Dame
• Original Assignee: John S. Dame
• Inventors: Dame, John S.
• Primary Examiner(s): Rolinec, Rudolph V.
• Assistant Examiner(s): Hart, R. E.
• Application Number:
  US05/297,547
• Time in Patent Office: 536 Days
• Field of Search: 307/205,221C,251,239,279,304
• US Class Current: 326/81
• CPC Class Codes: H03K 3/356104 using complementary field-effect transistors H03K3/35625 takes precedence
• CPC Class Codes: H03K 5/023 using field effect transistors

Abstract

A voltage level shifting circuit includes a pair of transistors of one conductivity type arranged in a bistable configuration, and a pair of transistors both of another conductivity type each arranged as a switch for operating the bistable circuit. One of the two switches is operative to conduct in response to a first voltage or reference potential. The bistable is operative in response to the first switch being conductive to switch to a first state and couple the reference potential to the output. The bistable is operative in response to the second switch being conductive to switch to the second state and couple a second voltage greater than the first voltage to the output.

Claims

1. A voltage level shifting circuit having input means, an output, and a source of potential having a first voltage, a second voltage greater than said first voltage, and a reference potential, said circuit including in combination;

bistable means coupled to said output and said source of potential and having a first state for coupling said reference potential to said output and a second state for coupling said second voltage to said output, first and second switch means coupled to said bistable means and to said input means, said first and second switch means being operative to conduct in response to one of said first voltage or reference potential being coupled thereto, said first switch means being conductive only when said second switch means is non-conductive and said second switch means being conductive only when said first switch means is non-conductive, said bistable means operative in response to said first switch means being conductive to switch to said first state, and operative in response to said second switch means being conductive to switch to said second state.

2. The voltage level shifting circuit of claim 1 wherein said bistable means includes first and second transistor means each having first and second principal electrodes and a control electrode, said second principal electrodes being coupled to said second voltage, said first principal electrode of said first transistor means being coupled to said control electrode of said second transistor means and said first principal electrode of said second transistor means being coupled to said control electrode of said first transistor means.

3. The voltage level shifting circuit of claim 2 wherein said first switch means is a third transistor means having first and second principal electrodes and a control electrode, and said second switch meanS is a fourth transistor means having first and second principal electrodes and a control electrode.

4. The voltage level shifting circuit of claim 3 wherein said first, second, third and fourth transistor means are all field effect transistors.

5. The voltage level shifting circuit of claim 4 wherein said first and third transistor means are opposite conductivity type and said second and fourth transistor means are opposite conductivity type.

6. The voltage level shifting circuit of claim 5 wherein said first and third transistor means first principal electrodes are coupled together, and said second and fourth transistor means first principal electrodes are coupled together.

7. The voltage level shifting circuit of claim 6 wherein said first and second transistors are P-channel field effect transistors, and said third and fourth transistors are N-channel field effect transistors.

8. The voltage level shifting circuit of claim 7 wherein said second principal electrodes are source electrodes and said first principal electrodes are drain electrodes.

9. The voltage level shifting circuit of claim 8 wherein said second switch means gate electrode is coupled to said input means and said second switch means source electrode is coupled to said ground potential.

10. The voltage level shifting circuit of claim 9 wherein said first switch means control electrode is coupled to said input means and said first switch means source electrode is coupled to ground potential.

11. The voltage level shifting circuit of claim 9 wherein said first switch means gate electrode is coupled to said first voltage and said second switch means source electrode is coupled to said input means.

12. A voltage level shifting circuit having input means, an output, a source of potential having a first voltage and a second voltage greater than said first voltage, and a reference potential including in combination;

first and second transistors of opposite conductivity type each having first and second principal electrodes and a control electrode, said first and second transistor first electrodes being coupled together, third and fourth transistors of opposite conductivity type each having first and second principal electrodes and a control electrode, said third and fourth transistor first electrodes being coupled together and to said first transistor control electrode, said first and third transistor second electrodes being coupled to said second voltage, said third transistor control electrode being coupled to said first and second transistor first electrodes and said fourth transistor second electrode being coupled to ground potential, first circuit means coupling said input means to said second and fourth transistors and second circuit means coupling one of said first transistor first electrodes and third transistor first electrode to said output.

13. The voltage level shifting circuit of claim 12 wherein said transistors are field effect transistors.

14. The voltage level shifting circuit of claim 13 wherein said first and second transistors are complementary metal oxide semiconductors.

15. The voltage level shifting circuit of claim 14 wherein said third and fourth transistors are complementary metal oxide semiconductors.

16. The voltage level shifting circuit of claim 15 wherein said first electrodes are drain electrodes, said second electrodes are source electrodes and said control electrodes are gate electrodes.

17. The voltage level shifting circuit of claim 16 wherein said first and third transistors are P-channel field effect transistors and said second and fourth transistors are N-channel field effect transistors.

18. A voltage level shifting circuit having input means, an output, a source of potential having a first voltage and a second voltage greater than said first voltage and a reference potential, including in combination;

first and second transistors of opposite conductivity type each having first and second principal electrodes and a Control electrode, said first and second transistor first electrodes being coupled together, third and fourth transistors of opposite conductivity type each having first and second principal electrodes and a control electrode, said third and fourth transistor first electrodes being coupled together and to said first transistor control electrode, said first and third transistor second electrodes being coupled to said second voltage and said second and fourth transistor second electrode being coupled to said ground potential, said second and fourth transistor control electrodes being coupled to said input means and said third transistor control electrode being coupled to said first and second transistor first electrodes, said output being coupled to one of said first transistor first electrode and third transistor first electrode.

19. A voltage level shifting circuit having input means, an output, a source of potential having a first voltage and a second voltage greater than said first voltage, and a reference potential including in combination;

first and second transistors of opposite conductivity type each having first and second principal electrodes and a control electrode, said first and second transistor first electrodes being coupled together, third and fourth transistors of opposite conductivity type each having first and second principal electrodes and a control electrode, said third and fourth transistor first electrodes being coupled together and to said first transistor control electrode, said first and third transistor second electrodes being coupled to said second voltage and said fourth transistor second electrode being coupled to said reference potential, said third transistor control electrode being coupled to said first and second transistor first electrodes, said second transistor second electrode and said fourth transistor control electrode being coupled to said input means, said second transistor control electrode being coupled to said first voltage, and said output being coupled to one of said first transistor first electrode and third transistor first electrode.