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INSULATED-GATE FIELD EFFECT SEMICONDUCTOR DEVICE HAVING LOW AND STABLE GATE THRESHOLD VOLTAGE

  • US 3,806,778 A
  • Filed: 12/21/1972
  • Issued: 04/23/1974
  • Est. Priority Date: 12/24/1971
  • Status: Expired due to Term
First Claim
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2. The device of claim 1, in which said tantalum layer has a thickness of between 100 and 1,000 angstroms, and said aluminum layer has a thickness of at least 1 micron.

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