MEMORY DEVICE
First Claim
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1. A memory device wholly contained on a single semiconductor slice comprising:
- means for writing data into said memory device;
a plurality of register stages, each of said register stages having a plurality of redundant shift registers, said shift registers fabricated from charge coupled devices;
means for connecting said register stages into a circular memory;
a plurality of majority voting means;
means connecting the outputs of each of said redundant shift registers to the inputs of each of said majority voting means;
means connecting the output of each of said majority voting means in one stage to the input of one of said redundant shift registers in the succeeding stage; and
means for reading information from said memory device.
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Abstract
A memory device is disclosed. The memory device is comprised of a plurality of shift registers and a plurality of majority voters. The outputs of each of said shift registers are connected to the inputs of each of said majority voters.
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Citations
2 Claims
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1. A memory device wholly contained on a single semiconductor slice comprising:
- means for writing data into said memory device;
a plurality of register stages, each of said register stages having a plurality of redundant shift registers, said shift registers fabricated from charge coupled devices;
means for connecting said register stages into a circular memory;
a plurality of majority voting means;
means connecting the outputs of each of said redundant shift registers to the inputs of each of said majority voting means;
means connecting the output of each of said majority voting means in one stage to the input of one of said redundant shift registers in the succeeding stage; and
means for reading information from said memory device.
- means for writing data into said memory device;
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2. The memory device claimed in claim 1 wherein said majority voting means are metal-oxide semiconductor transistors.
Specification