NUCLEAR RADIATION DETECTOR AND METHOD OF MANUFACTURING SAME

• US 3,824,680 A
• Filed: 07/08/1971
• Issued: 07/23/1974
• Est. Priority Date: 03/28/1968
• Status: Expired due to Term

• Current Assignee: Elena Laexandrovna Konorova, Stanislav Fedorovich Kozlov
• Original Assignee: Elena Laexandrovna Konorova, Stanislav Fedorovich Kozlov
• Inventors: Kozlov, Stanislav Fedorovich, Konorova, Elena Laexandrovna
• Primary Examiner(s): Lanham, Charles W.
• Assistant Examiner(s): Davie, James W.
• Application Number:
  US05/160,917
• Time in Patent Office: 1,111 Days
• Field of Search: 29/592,571 317/235AP 250/83.3R,83R
• US Class Current: 29/592.1
• CPC Class Codes: H01L 31/00 Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K30/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L27/00
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

A method of manufacturing a nuclear radiation detector comprising forming a plate from a diamond crystal whose thickness does not exceed the distance travelled by charge carriers within the plate under the influence of an applied field. The plate is then annealed in a vacuum at a temperature of 1,000* to 1,300*C whereafter blocking and injecting contacts are formed on opposite sides of the plate. During operation of the detector, polarization within the plate is removed by injection of charge carriers into the plate via the injecting contact, the latter being formed on the side of the plate opposite to that which is subjected to the radiation to be detected.

Claims

1. A method of manufacturing a nuclear radiation detector, comprising forming a plate from a diamond crystal, the thickness of which plate does not exceed the distance traveled by charge carriers under the influence of an applied field, annealing said plate in a vacuum at a temperature of 1,000* to 1,300*C, and then forming blocking and injecting contacts on opposite sides of said plate so that during operation polarization within the plate can be removed by injection of charge carriers into said plate via the injecting contact, said injecting contact being formed on the side of the plate opposite to that to be subjected to the radiation to be detected, said injecting contact being formed of a material capable, in conjunction with the diamond crystal plate, of injecting the charge carriers under the influence of said field.

2. A method of manufacturing a detector according to claim 1, wherein, prior to forming the Contacts, the annealed diamond crystal plate is etched by heating the same in an oxygen-containing medium for decreasing the rate of surface recombination of the charge carriers.

3. A method of manufacturing a detector according to claim 1, wherein both sides of the diamond crystal plate are covered with silver paint, then the plate is heated to a temperature of 500* to 700*C until silver contacts are formed on the sides of the plates.

4. A method of manufacturing a detector according to claim 1, wherein both sides of the diamond crystal plate are covered with gold paint, then the plate is heated to a temperature of 500* to 700*C until gold contacts are formed on both sides of the plate.

5. A method of manufacturing a detector according to claim 1, wherein both sides of the diamond crystal plate are covered with platinum paint, then the plate is heated to a temperature of 500* to 700*C until platinum contacts are formed on both sides of the plate.

6. A method of manufacturing a detector, according to claim 15, wherein both sides of the diamond crystal plate are covered with a solution of silver salts, then the plate is heated to a temperature of 500* to 700*C until silver is deposited for forming the contacts.

7. A method of manufacturing a detector according to claim 15, wherein both sides of the diamond crystal plate are covered with a solution of gold salts, then the plate is heated to a temperature of 500* to 700*C until gold is deposited for forming the contacts.

8. A method of manufacturing a detector, according to claim 15, wherein both sides of the diamond crystal plate are covered with a solution of platinum salts, then the plate is heated to a temperature of 500* to 700*C until platinum is deposited for forming the contacts.

9. A method of manufacturing a detector according to claim 15, wherein the blocking contact is first formed on one side of the diamond crystal plate, whereupon a colloidal graphite suspension is applied to the opposite sides and the plate is heated to a temperature of 500* to 600*C in vacuum for forming the injecting contact.

10. A method for manufacturing a detector according to claim 15, wherein the diamond crystal plate is graphitized for forming the blocking contact, whereupon a resulting graphite layer is removed from one side of the plate, a colloidal graphite suspension is applied to it and the plate is heated to a temperature of 500* to 600*C in vacuum for forming the injecting contact.

11. A method of manufacturing a detector according to claim 1, therein the diamond crystal plate is graphitized for forming the blocking contact, whereupon a resulting graphite layer is removed from one side of the plate, silver paint is applied thereto, and the plate is heated to a temperature of 500* to 700*C in vacuum until a silver injecting contact is formed thereon.