PREPARATION OF CHALCOGENIDE GLASS SPUTTERING TARGETS

• US 3,850,604 A
• Filed: 10/12/1973
• Issued: 11/26/1974
• Est. Priority Date: 12/11/1972
• Status: Expired due to Term

• Current Assignee: Richard M. Klein
• Original Assignee: Richard M. Klein
• Inventors: Klein, Richard M.
• Primary Examiner(s): Bashore, S. Leon
• Assistant Examiner(s): Miga, Frank W.
• Application Number:
  US05/406,066
• Time in Patent Office: 410 Days
• Field of Search: 65/DIG.6,32,59,45,49,54 29/25.17,25.18,630 264/272,274
• US Class Current: 65/32.5
• CPC Class Codes: C23C 14/0623 Sulfides, selenides or tellurides
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: Y10S 65/15 Nonoxygen containing chalogenides
• CPC Class Codes: Y10T 29/4913 Assembling to base an electrical component, e.g., capacitor, etc.

Abstract

A method of preparing large area chalcogenide glass sputtering targets. These targets are prepared in an evacuated chamber or inert gas atmosphere by heating a boule of chalcogenide in a quartz dish to contour the bottom face of the target. While heating the boule, a weight forces a wire mesh with a stud attached into the top surface of the boule. After a predetermined time to insure good physical bond between glass and mesh, the chamber is cooled to ambient and the sputtering target (chalcogenide glass-mesh-stud) may be removed.

Claims

1. AMETHOD OF MAKING A CHALCOGENIDE SPUTTERING TARGET COMPRISING THE STEPS OF:

A. PLACING CHALCOGENIDE GLASS IN A MOULD;

B. PLACING A FLAT INERT MESH WITH A CONNECTOR FIXEDLY ATTACHED ON TOP OF SAID GLASS;

C. PLACING A REMOVABLE INERT EIWEIGHT ON SAID CONNECTOR FOR

2. The method in accordance with claim 1 wherein the mould is a polished quartz dish.

3. The method in accordance with claim 1 wherein a boule of chalcogenide glass is used in step a.

4. The method in accordance with claim 3 wherein said chalcogenide glass comprises 24 atomic percent arsenic, 16 atomic percent antimony and 60 atomic percent selenium.

5. The method in accordance with claim 4 wherein said temperature is 400*C.

6. The method in accordance with claim 1 wherein the heating of said glass is performed in a controlled environment.

7. The method in accordance with claim 6 wherein the heating of said glass is performed in a vacuum.

8. The method in accordance with claim 6 wherein the heating of said glass is performed in an inert gas atmosphere.