SEMICONDUCTOR TEMPERATURE SENSOR

• US 3,881,181 A
• Filed: 02/22/1973
• Issued: 04/29/1975
• Est. Priority Date: 02/22/1973
• Status: Expired due to Term

• Current Assignee: Heshmat Khajezadeh
• Original Assignee: Heshmat Khajezadeh
• Inventors: Khajezadeh, Heshmat
• Primary Examiner(s): James, Andrew J.
• Application Number:
  US05/334,660
• Time in Patent Office: 796 Days
• Field of Search: 317/234,29,29.1,1,5.3,4 123/26 324/92 73/362SC 338/22R,25
• US Class Current: 257/467
• CPC Class Codes: G01F 1/6845 Micromachined devices
• CPC Class Codes: G01K 7/22 the element being a non-linear resistance, e.g. thermistor G01K7/26 takes precedence
• CPC Class Codes: G01P 5/12 using variation of resistance of a heated conductor

Abstract

A semicondcutor device adapted for use as a temperature sensor, e.g., in a flowing fluid medium for sensing changes in the flow rate of the medium, includes a temperature sensitive resistor comprising a region of semiconductive material of uniform resistivity. Beam leads make electrical connection to the resistor and are adapted to provide rugged structural support for the device within the fluid medium.

Claims

1. A semiconductor temperature sensor comprising:

a body of semiconductive material having a region therein of uniform resistivity, and means for supporting said body and making electrical contact to said region comprising cantilevered beam leads connected to spaced areas of said region.

2. A semiconductor temperature sensor as defined in claim 1 wherein said region is rectangular, having predetermined length, width, and thickness.

3. A semiconductor temperature sensor as defined in claim 1 wherein said body comprises a substrate of one type conductivity and an epitaxial layer on said substrate, said region being of conductivity type opposite to that of said substrate and being a part of said epitaxial layer.

4. A semiconductor temperature sensor as defined in claim 3 wherein said body further comprises a frame zone of said one type conductivity in said epitaxial layer surrounding said region.

5. A semiconductor temperature sensor as defined in claim 4 wherein said epitaxial layer has a thickness between about 1 and 20 micrometers and said uniform resistivity is between about 0.5 and about 5.0 ohm centimeters.

6. A semiconductor temperature sensor as defined in claim 4 wherein said sensor is adapted to sense the temperature of a fluid medium, said beam leads providing the sole support for said body within said fluid medium.

7. A silicon temperature sensor for use in a flowing fluid medium for sensing changes in the rate of flow of said fluid medium comprising:

a body of silicon having a surface and having therein adjacent to said surface a resistor Region of uniform resistivity and predetermined length, width, and thickness, a layer of electrically insulating material on said surface, said layer having spaced openings therein adjacent to spaced areas of the surface of said resistor region, and means for supporting said body in contact with said flowing fluid medium, comprising beam leads adhered to said insulating material and having portions extending into said openings to contact said resistor region, said beam leads having other portions extending beyond the edges of said body.

8. A semiconductor temperature sensor as defined in claim 7 wherein said body comprises a substrate of one type conductivity having an epitaxial layer thereon, said resistor region being of conductivity type opposite to that of said substrate and being a part of said epitaxial layer, and a frame zone of said one type conductivity in said epitaxial layer in surrounding relation to said resistor region, said frame zone defining the length and width of said resistor region.