METHOD OF MAKING A SOLID STATE INDUCTOR

• US 3,881,244 A
• Filed: 08/03/1973
• Issued: 05/06/1975
• Est. Priority Date: 06/02/1972
• Status: Expired due to Term

• Current Assignee: Don Leslie Kendall
• Original Assignee: Don Leslie Kendall
• Inventors: Kendall, Don Leslie
• Primary Examiner(s): Hall, Carl E.
• Application Number:
  US05/385,625
• Time in Patent Office: 641 Days
• Field of Search: 29/602,606,625,580,583 317/235H,235J,235P,11A 336/200,223,225
• US Class Current: 29/602.1
• CPC Class Codes: G11B 5/17 Construction or disposition of windings
• CPC Class Codes: H01F 17/0033 with the coil helically wound around a magnetic core
• CPC Class Codes: H01F 2017/0086 on semiconductor substrate inductors for integrated circuits H01L28/10
• CPC Class Codes: H01F 27/40 Structural association with built-in electric component, e.g. fuse
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor

Abstract

Disclosed is a solid state inductor which is formed in a monocrystalline semiconductor body. An electrically isolated helix comprised of conductive studs selectively interconnected by electrical contacts circumscribes an electrically isolated core material. Typically the studs are comprised of the semiconductor slice material, or are deposited conductor. Also disclosed is an integrated circuit having such solid state inductor therein.

Claims

1. The method of forming a semiconductor inductor from a semiconductor body having first and second surfaces comprising the steps of:

a. forming a plurality of selectively spaced parallel grooves in said first surface to provide at least first and second rows of semicondutor material between said grooves, b. selectively removing portions of siad first and second rows to provide studs in said first and second rows, c. depositing a core material of one permeability between said first and second rows of semiconductor studs, d. lapping said lower surface to remove said semiconductor body between said second surface and said grooves, and e. selectively electrically interconnecting said semiconductor studs in a helix configuration circumventing said core material.

2. The method of making a semiconductor inductor of claim 1, wherein said semiconductor body comprises silicon.

3. The method of making an inductor of claim 2 wherein said semiconductor studs have sidewalls lying substantially in the (110) crystallographic plane.

4. The method of forming a semiconductor from a semiconductor body having first and second surfaces comprising the steps of:

a. selectively removing portions of said first surface to provide first and second rows of studs extending substantially to said second surface;

b. circumfusing said first and second row of studs with a circumfusing material c. removing the portion of said semiconductor body between said second surface and the base of said studs; and

d. selectively electrically interconnecting said semiconductor studs in a helix configuration.

5. The method of making an inductor according to claim 4 and further including the step of depositing a core material between said first and second rows of semiconductors studs such that said step of selectively electrically interconnecting circumvents said core material.