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METHOD OF MAKING A SEMICONDUCTOR DEVICE

  • US 3,895,429 A
  • Filed: 05/09/1974
  • Issued: 07/22/1975
  • Est. Priority Date: 05/09/1974
  • Status: Expired due to Term
First Claim
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1. A method of making a semiconductor device comprising the steps of:

  • a. providing a first conducting layer on one of a pair of opposed surfaces of a semiconductor wafer, then b. forming on said first conducting layer a second conducting layer having a plurality of spaced openings, then c. forming grooves in said semiconductor wafer along lines extending between said openings from the other of said surfaces of said semiconductor wafer so that each one of the remaining portions of said semiconductor wafer is disposed across one of said openings, then d. inserting a removable filling material into said grooves in said semiconductor wafer, then e. providing a substrate layer in electrical contact with a surface of each one of said remaining portions of said semiconductor wafer, and then f. separating said remaining portions of said semiconductor wafer.

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