METHOD OF MAKING A SEMICONDUCTOR DEVICE
First Claim
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1. A method of making a semiconductor device comprising the steps of:
- a. providing a first conducting layer on one of a pair of opposed surfaces of a semiconductor wafer, then b. forming on said first conducting layer a second conducting layer having a plurality of spaced openings, then c. forming grooves in said semiconductor wafer along lines extending between said openings from the other of said surfaces of said semiconductor wafer so that each one of the remaining portions of said semiconductor wafer is disposed across one of said openings, then d. inserting a removable filling material into said grooves in said semiconductor wafer, then e. providing a substrate layer in electrical contact with a surface of each one of said remaining portions of said semiconductor wafer, and then f. separating said remaining portions of said semiconductor wafer.
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Abstract
A conducting layer having a plurality of spaced openings is provided on a surface of a semiconductor wafer. Grooves are formed on the semiconductor wafer from an opposing surface of the semiconductor wafer so that each one of the remaining portions of the semiconductor wafer is disposed across one of the openings. Removable filling material is inserted into the grooves in the semiconductor wafer. A substrate layer is provided in electrical contact with a surface of each one of the remaining portions of the semiconductor wafer. The remaining portions of the semiconductor wafer are separated from each other.
10 Citations
5 Claims
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1. A method of making a semiconductor device comprising the steps of:
- a. providing a first conducting layer on one of a pair of opposed surfaces of a semiconductor wafer, then b. forming on said first conducting layer a second conducting layer having a plurality of spaced openings, then c. forming grooves in said semiconductor wafer along lines extending between said openings from the other of said surfaces of said semiconductor wafer so that each one of the remaining portions of said semiconductor wafer is disposed across one of said openings, then d. inserting a removable filling material into said grooves in said semiconductor wafer, then e. providing a substrate layer in electrical contact with a surface of each one of said remaining portions of said semiconductor wafer, and then f. separating said remaining portions of said semiconductor wafer.
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2. A method in accordance with claim 1 in which prior to forming said grooves in said semiconductor wafer, a conducting layer is provided on the other of said opposed surfaces of said wafer.
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3. A method in accordance with claim 2 in which said grooves in said semiconductor wafer are formed by etching through said conducting layer on said other surface of said wafer and into said wafer.
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4. A method in accordance with claim 3 in which prior to providing said substrate layer, said filling material is lapped so as to have a surface which is substantially coplanar with said conducting layer on said other surface of said wafer.
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5. A method in accordance with claim 1 in which after forming said grooves and before inserting said filling material in said grooves, a passivation layer is provided on the outer edges of each one of said remaining portions.
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